Patent
Dual damascene fabrication with low k materials
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TLDR
In this paper, a dual damascene structure is fabricated on a substrate using a low-k dielectric material layer to a desired etch depth to form a trench prior to forming a via, and then a bottom etch stop layer on the bottom of the vias is then etched and the organic fill material is striped.Abstract:
The invention provides methods and apparatuses for fabricating a dual damascene structure on a substrate First, trench lithography and trench patterning are performed on the surface of a substrate to etch a low-k dielectric material layer to a desired etch depth to form a trench prior to forming of a via The trenches can be filled with an organic fill material and a dielectric hard mask layer can be deposited Then, via lithography and via resist pattering are performed Thereafter, the dielectric hard mask and the organic fill material are sequentially etched to form vias on the surface of the substrate, where the trenches are protected by the organic fill material from being etched A bottom etch stop layer on the bottom of the vias is then etched and the organic fill material is striped As a result, the invention provides good patterned profiles of the via and trench openings of a dual damascene structureread more
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References
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Patent
Hydrogenated oxidized silicon carbon material
TL;DR: In this paper, a low dielectric constant, thermally stable hydrogenated oxidized silicon carbon (HOSOC) film which can be used as an interconnect dielectrics in IC chips is disclosed.
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