Effect of substrate temperature on ZnS films prepared by thermal evaporation technique
TLDR
In this paper, the structural properties of nanocrystalline ZnS semiconducting thin films have been determined by D.C. two point probe and ultra-violet visible spectroscopy measurements.Abstract:
The nanocrystalline ZnS semiconducting thin films of 500 nm thickness have been deposited on glass substrate at different substrate temperatures (T
s) by thermal evaporation technique. The structural property of deposited thin films has been measured by X-ray diffraction, scanning electron microscopy, and Energy dispersive analysis of X-ray. The electrical and optical properties of thin films have been determined by D.C. two point probe and ultra-violet visible spectroscopy measurements. The X-ray diffraction patterns show that thin films have cubic structure. The electrical resistivity of thin films has decreased from 0.36 × 106 to 0.15 × 106 Ω cm as substrate temperature increases from 300 to 400 K. It shows that films have semiconducting in nature. The grain size and electrical conductivity of the thin films have increased as the deposition temperature increased while dislocation density, activation energy, and band gap decreased. The minimum band gap 3.43 eV has been found.read more
Citations
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Single-material multilayer ZnS as anti-reflective coating for solar cell applications
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Highly transparent, flexible and hydrophilic ZnS thin films prepared by a facile and environmentally friendly chemical bath deposition method
TL;DR: In this article, the growth of highly transparent and hydrophilic ZnS thin films on flexible polymeric and glass substrates has been performed using an environmentally friendly chemical bath deposition method with an ammonia and thioacetamide free reaction solution.
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Optical constants and dispersion parameters of La-doped ZnS nanocrystalline films prepared by sol–gel technique
TL;DR: In this article, the structure, morphology and particle size of La-doped ZnS nanocrystalline films were investigated by XRD, SEM and FTIR, and it was shown that the obtained films are nanocrystine corresponding to the hexagonal Zinc phase with the particle size 3.44-15.13nm.
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Investigation of structural, optical and electrical properties of ZnS thin films prepared by ultrasonic spray technique for photovoltaic applications
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Preparation and study of doped ZnS thin films
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TL;DR: In this article, an ion assisted deposition system was developed and evaluated for in-situ doping control of ZnS thin films in thin-film photovoltaic devices.
References
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Physical Concepts of High‐Field, Thin‐Film Electroluminescence Devices
R. Mach,G. O. Müller +1 more
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Crystalline ZnS thin films by chemical bath deposition method and its characterization
TL;DR: In this article, the structural and morphological characteristics of thin ZnS films have been investigated by X-ray diffraction (XRD), scanning electron microscope and atomic force microscope analysis.
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Synthesis and photoluminescence enhancement of Mn2+-doped ZnS nanocrystals
Song Wei Lu,Burtrand I. Lee,Zhong Lin Wang,W. Tong,B. K. Wagner,Wounjhang Park,Christopher J. Summers +6 more
TL;DR: In this article, a 30-fold increase in photoluminescence intensity has been observed from Mn 2+ -doped ZnS nanoparticles after surface passivation by a passivating agent with carboxylic functional groups.
Journal ArticleDOI
Quantum size effects in semiconductor crystallites: Calculation of the energy spectrum for the confined exciton
Heidemarie Schmidt,Horst Weller +1 more
TL;DR: In this article, a simple model for the light absorption of a small semiconductor particle is presented. But the model is restricted to the exciton (e−, h+) confined to a sphere.