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Journal ArticleDOI

Elastic Properties and Representative Volume Element of Polycrystalline Silicon for MEMS

TLDR
In this paper, a nanoscale mechanical deformation measurement method was employed to obtain the Young's modulus and Poisson's ratio of polycrystalline silicon for Microelectromechanical Systems (MEMS) from different facilities, and to assess the scale at which these effective properties are valid in MEMS design.
Abstract
A nanoscale mechanical deformation measurement method was employed to obtain the Young’s modulus and Poisson’s ratio of polycrystalline silicon for Microelectromechanical Systems (MEMS) from different facilities, and to assess the scale at which these effective properties are valid in MEMS design. The method, based on in situ Atomic Force Microscope (AFM) imaging and Digital Image Correlation (DIC) analysis, employed 2–2.5 μm thick freestanding specimens with surface measurement areas varying between 1×2 and 5×15 μm2. The effective mechanical properties were quite invariant with respect to the fabrication facility: the Poisson’s ratio of polycrystalline silicon from the Multi-user MEMS Processes (MUMPs) and from Sandia’s Ultra planar four layer Multilevel MEMS Technology (SUMMiT-IV) was 0.22±0.02, while the elastic moduli for MUMPs and SUMMiT-IV polysilicon were 164±7 and 155±6 GPa, respectively. The AFM/DIC method was used to determine the size of the material domain whose mechanical behavior could be described by the isotropic constants. For SUMMiT polysilicon with columnar grains and 650 nm average grain size, it was found that a 10×10-μm2 specimen area, on average containing 15×15 columnar grains, was a representative volume element. However, the axial displacement fields in 4×4 or 2×2 μm2 areas could be highly inhomogeneous and the effective behavior of these specimen domains could deviate significantly from that described by isotropy. As a consequence, the isotropic material constants are applicable to MEMS components comprised of 15×15 or more grains, corresponding to specimen areas equal to 10×10 μm2 for SUMMiT and 5×5 μm2 for MUMPs, and do not provide an accurate description of the mechanics of smaller MEMS components.

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Citations
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Journal ArticleDOI

Lateral buckling mechanics in silicon nanowires on elastomeric substrates

TL;DR: Experimental and theoretical studies of the buckling mechanics in silicon nanowires (SiNWs) on elastomeric substrates suggest that the energy associated with this in-plane buckling is slightly lower than the out-of-plane case for the geometries and mechanical properties that characterize the SiNWs.
Journal ArticleDOI

Multiscale strain measurements of plastically deforming polycrystalline titanium: Role of deformation heterogeneities

TL;DR: In this paper, the spatial distribution of residual deformation at the mesoscale (a few grains) and at the macroscale (hundreds of grains) in titanium subjected to cyclic tensile loading was characterized using ex situ digital image correlation.
Journal ArticleDOI

Nonlinear mechanics of electrically actuated microplates

TL;DR: In this paper, the pull-in characteristics of a microplate-based microelectromechanical system (MEMS) are investigated via a multi-degree freedom energy-based technique where the in-plane and out-of-plane motions are retained in the modelling and simulations.
Journal ArticleDOI

Experimental Investigation of Strain Rate Dependence of Nanocrystalline Pt Films

TL;DR: In this paper, a microscale uniaxial tension experimental method was developed to investigate the strain rate dependent mechanical behavior of freestanding metallic thin films for MEMS, which allows for highly repeatable mechanical testing of thin films.
References
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Book

Physical properties of crystals

John F. Nye
TL;DR: In this paper, the physical properties of crystals systematically in tensor notation are presented, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them.
BookDOI

Lehrbuch der Kristallphysik

W. Voight
Journal ArticleDOI

Determination of displacements using an improved digital correlation method

TL;DR: An improved digital correlation method is presented for obtaining the full-field in-plane deformations of an object by numerically correlating a selected subset from the digitized intensity pattern of the undeformed object.
Journal ArticleDOI

Calculated elastic constants for stress problems associated with semiconductor devices

TL;DR: In this paper, a generalized expression for ν has been derived for arbitrary orientations of cubic semiconductor crystals, and the variation of E, ν, and E/(1−ν) for directions within the important {111, {100, and {110} planes is examined.
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