Proceedings ArticleDOI
Electrically Programmable Fuse (eFUSE): From Memory Redundancy to Autonomic Chips
Norman Robson,John M. Safran,Chandrasekharan Kothandaraman,Alberto Cestero,Xiang Chen,R. Rajeevakumar,Alan J. Leslie,Dan Moy,T. Kirihata,Subramanian S. Iyer +9 more
- pp 799-804
Reads0
Chats0
TLDR
The evolution and applications of electrical fuse solutions for 180 nm to 45 nm technologies at IBM are reviewed, and some insight into future uses in 32 nm technology and beyond with the eFUSE as a building block for the autonomic chip of the future is provided.Abstract:Â
Electrical fuse (eFUSE) has become a popular choice to enable memory redundancy, chip identification and authentication, analog device trimming, and other applications. We will review the evolution and applications of electrical fuse solutions for 180 nm to 45 nm technologies at IBM, and provide some insight into future uses in 32 nm technology and beyond with the eFUSE as a building block for the autonomic chip of the future.read more
Citations
More filters
Journal ArticleDOI
Counterfeit Integrated Circuits: Detection, Avoidance, and the Challenges Ahead
TL;DR: This paper will present all types of counterfeits, the defects present in them, and their detection methods, and the effectiveness and limitations of these anti-counterfeiting techniques.
Patent
Programmable Resistive Device and Memory Using Diode as Selector
TL;DR: In this article, a programmable resistive memory can be configured to be programmable by applying voltages to conduct current flowing through the programmable resistor element to change its resistance for a different logic state.
Proceedings ArticleDOI
A Commercial Field-Programmable Dense eFUSE Array Memory with 99.999% Sense Yield for 45nm SOI CMOS
Gregory J. Uhlmann,T. Aipperspach,Toshiaki Kirihata,K. Chandrasekharan,Yan Zun Li,Chris Paone,B. Reed,Norman Robson,John M. Safran,D. Schmitt,S.S. Iyer +10 more
TL;DR: A second-generation one-time programmable read-only memory (OTPROM) that provides these features through a balanced bitline, resistor pull-up, differential sense amp with a programmable reference is described.
Patent
Circuit and system of using FinFET for building programmable resistive devices
TL;DR: In this article, junction diodes or MOS devices fabricated in standard FinFET technologies can be used as program selectors or OTP element in a programmable resistive device, such as interconnect fuse, contact/via fuse, anti-fuse, or emerging nonvolatile memory such as MRAM, PCRAM, CBRAM, or RRAM.
Proceedings ArticleDOI
Anti-counterfeit Techniques: From Design to Resign
TL;DR: This paper presents a detailed taxonomy of counterfeit types to analyze the vulnerabilities in the electronic component supply chain and presents the state of knowledge on anti-counterfeit technologies to help prevent counterfeit components from ever entering into the supply network and to provide capabilities for easy detection.
References
More filters
Proceedings ArticleDOI
The design and implementation of a first-generation CELL processor
D. Pham,Shigehiro Asano,M. Bolliger,M. N. Day,Harm Peter Hofstee,Charles Ray Johns,J. Kahle,Atsushi Kameyama,J. Keaty,Y. Masubuchi,Mack W. Riley,David Shippy,Daniel Lawrence Stasiak,Masakazu Suzuoki,Michael Fan Wang,James D. Warnock,S. Weitzel,D. Wendel,Takeshi Yamazaki,Kazuaki Yazawa +19 more
TL;DR: A CELL processor is a multi-core chip consisting of a 64b power architecture processor, multiple streaming processors, a flexible IO interface, and a memory interface controller that is implemented in 90nm SOI technology.
Journal ArticleDOI
Electrically programmable fuse (eFUSE) using electromigration in silicides
TL;DR: In this article, the authors describe a positive application of electromigration, as an electrically programmable fuse device (eFUSE), which shows a large increase in resistance that enable easy sensing.
Proceedings ArticleDOI
Design and implementation of the POWER5 microprocessor
Joachim Gerhard Clabes,Joshua Friedrich,Mark D. Sweet,Jack DiLullo,Sam Gat-Shang Chu,Donald W. Plass,James W. Dawson,Paul H. Muench,Larry Powell,Michael Stephen Floyd,Balaram Sinharoy,Mike Lee,Michael Normand Goulet,James Donald Wagoner,Nicole Schwartz,Steve Runyon,Gary Alan Gorman,Phillip J. Restle,Ronald Nick Kalla,Joseph McGill,Steve Dodson +20 more
TL;DR: POWERS offers significantly increased performance over previous POWER designs by incorporating simultaneous multithreading, an enhanced memory subsystem, and extensive RAS and power management support.
Proceedings ArticleDOI
A Compact eFUSE Programmable Array Memory for SOI CMOS
John M. Safran,Alan J. Leslie,Gregory J. Fredeman,Chandrasekharan Kothandaraman,Alberto Cestero,Xiang Chen,R. Rajeevakumar,Deok-kee Kim,Yan Zun Li,Dan Moy,Norman Robson,T. Kirihata,S. S. Iyer +12 more
TL;DR: A compact eFUSE programmable array memory configured as a 4 Kb one-time programmable ROM (OTPROM) is presented, demonstrating a >10X density increase over traditional VLSI fuse circuits.
Proceedings ArticleDOI
Reliability and design qualification of a sub-micron tungsten silicide E-Fuse
William R. Tonti,John A. Fifield,Higgins John Jesse,William H. Guthrie,Wayne S. Berry,Chandrasekhar Narayan +5 more
TL;DR: In this paper, a case study is presented to optimize polysilicon electrical fuse long term reliability for Tungsten Silicide E-Fuse (WSi/sub 2/).