scispace - formally typeset
Journal ArticleDOI

Electro-optic measurements of the ferroelectric-paraelectric boundary in Ba1−xSrxTiO3 materials chips

Reads0
Chats0
TLDR
In this paper, the phase boundary of Ba1−xSrxTiO3 thin-film systems was studied using combinatorial material chip strategy. But the phase boundaries were not defined.
Abstract
The combinatorial material chip strategy is used to study the ferroelectric-paraelectric phase boundary of the Ba1−xSrxTiO3 thin film system. The electro-optic (EO) effect at different compositions is measured using a modified direct-current/alternating-current birefringence EO measurement technique. We find that Ba1−xSrxTiO3 thin films exhibit relaxor like behavior with diffused ferroelectric domains existing well past the previously defined ferroelectric-paraelectric boundary (x>0.3).

read more

Citations
More filters
Journal ArticleDOI

Combinatorial approaches as effective tools in the study of phase diagrams and composition-structure-property relationships

TL;DR: A comprehensive overview of state-of-the-art combinatorial/high-throughput methodologies and tools for accelerated materials research and discovery can be found in this article.
Journal ArticleDOI

Ferroelectric Epitaxial Thin Films for Integrated Optics

TL;DR: In this article, a waveguide structure with low optical loss has been demonstrated using epitaxial thin film ferroelectrics on low-index substrates, and high-bandwidth electro-optic modulators have also been attained.
Journal ArticleDOI

Ferroelectric ceramics by sol–gel methods and applications: a review

TL;DR: In this paper, the basic principles governing ferroelectricity and various materials which exhibit these properties are described. And some important applications of the microstructure examination as well as powerful techniques are briefly discussed.
Journal ArticleDOI

Structural and electro-optic properties of Ba0.7Sr0.3TiO3 thin films grown on various substrates using pulsed laser deposition

TL;DR: In this paper, the in-plane temperature dependence of relative permittivity of the films was measured on interdigital electrodes and the linear electro-optic coefficient rcof the BST films grown on LAO and LSAT was found to be 82.7×10−12 and 125.0×10 −12m∕V, respectively.
Journal ArticleDOI

Epitaxial ferroelectric oxide thin films for optical applications

TL;DR: In this paper, the authors review the work on epitaxial ferroelectric (FE) films for optical applications and highlight some thin-film devices that exploit the aforementioned optical effects.
References
More filters
Journal ArticleDOI

A combinatorial approach to materials discovery.

TL;DR: The ability to generate and screen combinatorial libraries of solid-state compounds, when coupled with theory and empirical observations, may significantly increase the rate at which novel electronic, magnetic, and optical materials are discovered and theoretical predictions tested.
Journal ArticleDOI

Electro‐optic effects of (Pb, La)(Zr, Ti)O3 thin films prepared by rf planar magnetron sputtering

TL;DR: In this paper, a high quadratic electrooptic coefficient of 0.8×10−16 (m/V)2 was obtained at 6328 A. The rf planar magnetron sputtering process improved the quality of the thin-film integrated optic devices.
Journal ArticleDOI

A low-loss composition region identified from a thin-film composition spread of (Ba1−x−ySrxCay)TiO3

TL;DR: In this paper, a ternary composition spread of (Ba1−x−ySrxCay)TiO3 on an equilateral-triangle-shaped LaAlO3 substrate was achieved by a precisely controlled shutter system inside a pulsed laser deposition chamber.
Journal ArticleDOI

Electro-optical characterization of Pb(Zr,Ti)O3 thin films by waveguide refractometry

TL;DR: In this paper, the extraordinary and ordinary refractive indices of a Pb(Zr0.53Ti0.47)O3 thin film were independently determined using waveguide refractometry.
Journal ArticleDOI

Electro-optic measurements of thin-film materials by means of reflection differential ellipsometry

TL;DR: In this paper, the authors used reflection differential ellipsometry to quantify the field-induced changes of the ordinary and extraordinary indices of thin-film material and the incident-angle distribution.
Related Papers (5)