Journal ArticleDOI
Electronic states at the surfaces of crystals: I. The approximation of nearly free electrons
E. T. Goodwin
- Vol. 35, Iss: 2, pp 205-220
TLDR
In this article, the wave functions and energies of these states are calculated, on the nearly free electron approximation, in terms of the constants of the crystalline potential field, which is represented by a triple Fourier series having the periodicity of the lattice.Abstract:
It is shown that in a crystal there exist states in which the electron is bound to a surface of the crystal and has an energy lying within a forbidden band. The wave functions and energies of these states are calculated, on the nearly free electron approximation, in terms of the constants of the crystalline potential field, which is represented by a triple Fourier series having the periodicity of the lattice. The method is shown to be applicable to a general crystal having a surface parallel to any one of the crystal planes.read more
Citations
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Book ChapterDOI
Theory of Surface States
TL;DR: In this paper, it was shown that virtual or resonance surface states can exist which behave for practical purposes in the same way as the tails of the metal wave functions rather than separate states.
Journal ArticleDOI
Photoemission studies of quantum well states in thin films
TL;DR: In this paper, the authors review the basic physics and applications of quantum well spectroscopy, and provide a detailed understanding of the behavior of simple quantum wells including the effects of lattice mismatch, which provides a useful basis for investigating the properties of multilayers.
Journal ArticleDOI
Decay of electronic excitations at metal surfaces
Pedro M. Echenique,Pedro M. Echenique,Richard Berndt,Eugene V. Chulkov,Eugene V. Chulkov,Th. Fauster,A. Goldmann,Ulrich Höfer +7 more
TL;DR: In this article, an accurate determination of surface-state linewidth by scanning tunneling spectroscopy, photoemission and directly in the time domain by two-photon photo-emission is presented.
Journal ArticleDOI
On the physics of metal-semiconductor interfaces
TL;DR: In this article, the authors describe the continuum of metal-induced gap states (MIGS) which are derived from the virtual gap states of the complex semiconductor band structure, and the physical mechanism primarily determining barrier height is provided by the decay of the metal's electron wavefunctions into the semiconductor in the energy range between the top of the valence band and the Fermi level.
References
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