Enhanced atomic layer etching of native aluminum oxide for ultraviolet optical applications
John Hennessy,Christopher S. Moore,Kunjithapatham Balasubramanian,April D. Jewell,Shouleh Nikzad +4 more
TLDR
In this article, an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) is implemented to controllably etch aluminum oxide.Abstract:
The authors report on the development and application of an atomic layer etching (ALE) procedure based on alternating exposures of trimethylaluminum and anhydrous hydrogen fluoride (HF) implemented to controllably etch aluminum oxide. The ALE process utilizes the same chemistry previously demonstrated in the atomic layer deposition of aluminum fluoride thin films, and can therefore be exploited to remove the surface oxide from metallic aluminum and replace it with thin fluoride layers in order to improve the performance of ultraviolet aluminum mirrors. This ALE process is modified relative to existing methods through the use of a chamber conditioning film of lithium fluoride, which is shown to enhance the loss of fluorine surface species and results in conformal layer-by-layer etching of aluminum oxide films. Etch properties were explored over a temperature range of 225–300 °C with the Al2O3 etch rate increasing from 0.8 to 1.2 A per ALE cycle at a fixed HF exposure of 60 ms per cycle. The effective etch ...read more
Citations
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Journal ArticleDOI
Effect of HF Pressure on Thermal Al2O3 Atomic Layer Etch Rates and Al2O3 Fluorination
TL;DR: In this article, the effect of HF pressure on the Al2O3 etch rates and fluorination was explored, and different HF pressures ranging from 0.07 to 9.0 Torr were employed for Al 2O3 fluorination.
Journal ArticleDOI
Thermal Atomic Layer Etching of Silicon Using O2, HF, and Al(CH3)3 as the Reactants
TL;DR: In this paper, a thermal atomic layer etching (ALE) of silicon was performed using O2, HF, and Al(CH3)3 as the reactants at temperatures from 225 to 290 °C.
Journal ArticleDOI
Optics technology for large-aperture space telescopes: from fabrication to final acceptance tests
Isaac Trumper,Pascal Hallibert,Jonathan W. Arenberg,Hideyo Kunieda,Olivier Guyon,H. Philip Stahl,Dae Wook Kim +6 more
TL;DR: The technology presented in the manuscript represents the most promising methods to enable a next level of astronomical observation capabilities for space-based telescopes as motivated by the science community.
Journal ArticleDOI
Modeling the Chemical Mechanism of the Thermal Atomic Layer Etch of Aluminum Oxide: A Density Functional Theory Study of Reactions during HF Exposure
TL;DR: A theoretical investigation of the hydrogen fluoride pulse in the thermal atomic layer etch of monoclinic alumina has been performed using density functional theory calculations as mentioned in this paper, and it has been suggested that the HF pulse forms a stable and nonvolatile layer of AlF3 on an alumina surface.
Journal ArticleDOI
Thermal Atomic Layer Etching of Al2O3, HfO2, and ZrO2 Using Sequential Hydrogen Fluoride and Dimethylaluminum Chloride Exposures
Younghee Lee,Steven M. George +1 more
TL;DR: Atomic layer etching (ALE) of Al2O3, HfO2, and ZrO2 was accomplished using sequential exposures with hydrogen fluoride (HF) as the fluorination reagent and dimethylaluminum chloride (DMAC, AlCl(CH3).
References
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Journal ArticleDOI
Aluminum for Plasmonics
TL;DR: This work observes that the energy of the plasmon resonance is determined by, and serves as an optical reporter of, the percentage of oxide present within the Al, and paves the way toward the use of aluminum as a low-cost plAsmonic material with properties and potential applications similar to those of the coinage metals.
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Aluminum plasmonic nanoantennas.
Mark W. Knight,Lifei Liu,Yumin Wang,Lisa V. Brown,Shaunak Mukherjee,Nicholas S. King,Henry O. Everitt,Peter Nordlander,Naomi J. Halas +8 more
TL;DR: In this article, the local density of optical states (LDOS) of individual aluminum nanorod antennas with cathodoluminescence (CL) was analyzed with a spatial resolution less than 20 nm and radiative modes of these nanostructures across the visible and into the UV spectral range.
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Atomic layer etching of Al2O3 using sequential, self-limiting thermal reactions with Sn(acac)2 and hydrogen fluoride.
Younghee Lee,Steven M. George +1 more
TL;DR: The thermal ALE of many other metal oxides using Sn(acac)2 or other metal β-diketonates, together with HF, should be possible by a similar mechanism, and may also be applicable to other materials such as metal nitrides, metal phosphide, metal sulfides and metal arsenides.
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On the Vacuum-Ultraviolet Reflectance of Evaporated Aluminum before and during Oxidation*
TL;DR: Time-dependent vacuum-dependent reflectance measurements of evaporated aluminum films before and after oxidation were performed in this article, showing that the reflectance of aluminum films is positively correlated with the time of evaporation.
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Prospects for Thermal Atomic Layer Etching Using Sequential, Self-Limiting Fluorination and Ligand-Exchange Reactions.
Steven M. George,Younghee Lee +1 more
TL;DR: This new thermal pathway for ALE represents the reverse of atomic layer deposition (ALD) and should lead to isotropic etching and Enhancement of ALE rates and possible anisotropic ALE could be achieved using radicals or ions together with thermal ALE.