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Journal ArticleDOI

Enhanced Polar Exciton-LO-Phonon Interaction in Quantum Dots

TLDR
In this article, an unexpectedly enhanced polar exciton-LO-phonon interaction for such strained low-symmetry QDs is found, and calculations in the adiabatic approximation indicate that the particular quantum confinement and piezoelectric effect together account for the enhanced coupling.
Abstract
Phonon-assisted exciton transitions in self-organized InAs/GaAs quantum dots (QDs) are investigated by photoluminescence (PL) and PL excitation spectroscopy. An unexpectedly enhanced polar exciton-LO-phonon interaction for such strained low-symmetry QDs is found. Calculations in the adiabatic approximation indicate that the particular quantum confinement and piezoelectric effect together account for the enhanced coupling. The results provide new insights into the long-standing problem of the exciton-phonon interaction in zero-dimensional systems.

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Journal ArticleDOI

Hot Exciton Relaxation Dynamics in Semiconductor Quantum Dots: Radiationless Transitions on the Nanoscale

TL;DR: In this paper, the femtosecond state-resolved pump/probe experiments on colloidal CdSe quantum dots were conducted to provide the first quantitative measure of excitonic state-to-state transition rates.
Journal ArticleDOI

Influence of electron-phonon interaction on the optical properties of III nitride semiconductors

TL;DR: In this paper, the electron-phonon interaction energy has a great influence on the optical properties of the III nitride semiconductors, such as phonon replicas in the emission spectra, homogeneous broadening of the excitonic line width and the relaxation of hot carriers to the fundamental band edge.
Journal ArticleDOI

Exciton dephasing via phonon interactions in InAs quantum dots: dependence on quantum confinement

TL;DR: In this paper, the dephasing of the ground-state transition in a series of InGaAs?GaAs quantum dots having different quantum confinement potentials was investigated using a highly sensitive four-wave mixing technique.
Journal ArticleDOI

Exciton Kinetics, Quantum Efficiency, and Efficiency Droop of Monolayer MoS2 Light-Emitting Devices

TL;DR: The significantly elevated Auger recombination in the emerging two-dimensional (2D) semiconductors is primarily an indirect process and is attributed to the abrupt bounding surfaces and the enhanced correlation, mediated by magnified Coulomb interactions, between electrons and holes confined in a 2D structure.
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