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Evidence for spin splitting in In x Ga 1-x As/In 0.52 Al 0.48 As heterostructures as B-->0

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TLDR
In this paper, the splitting in zero magnetic field between the up-and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different modulation-doped heterostructures with high electron densities.
Abstract
The splitting in zero magnetic field between the up- and down-spin electrons in a two-dimensional electron gas is obtained for a series of three different ${\mathrm{In}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}/{\mathrm{In}}_{0.52}{\mathrm{Al}}_{0.48}\mathrm{As}$ modulation-doped heterostructures with high electron densities [${n}_{s}\ensuremath{\sim}(1.5\ensuremath{-}1.8)\ifmmode\times\else\texttimes\fi{}{10}^{12}$ ${\mathrm{cm}}^{\ensuremath{-}2}$]. We have observed a characteristic beating modulation in the amplitude of the Shubnikov-de Haas oscillations in this system and up to six nodes have been measured in the Shubnikov-de Haas data for magnetic fields in the range $0.15 \mathrm{T}lBl1.0 \mathrm{T}$. Analysis of these data indicates that one subband is primarily occupied and the two beating frequencies arise from a spin splitting of the lowest subband. A spin splitting of 1.5-2.5 meV as $B\ensuremath{\rightarrow}0$ is deduced from the data. For magnetic fields applied at an angle $\ensuremath{\theta}$ to the interface, the beat positions scale as $cos\ensuremath{\theta}$ for small angles but increase steeply after a critical angle.

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Spintronics: Fundamentals and applications

TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
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Electronic analog of the electro‐optic modulator

TL;DR: In this article, an electron wave analog of the electro-optic light modulator is proposed, where magnetized contacts are used to preferentially inject and detect specific spin orientations.
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Semiconductor Spintronics

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Journal ArticleDOI

Spin photocurrents in quantum wells

TL;DR: In this paper, it was shown that the spin polarization of uniformly distributed electrons causes a directed motion of electrons in the plane of the QW. But the effect of spin polarization on the motion of the electrons was not investigated.
Journal ArticleDOI

Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells

TL;DR: In this article, the relative strengths of Rashba and Dresselhaus terms describing spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG).
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