Journal ArticleDOI
Exciton luminescence in lead iodide lifetime, intensity and spectral position dependence on temperature
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TLDR
In this article, the emission spectrum of PbI 2 on the low energy side of the fundamental exciton absorption, was studied in the temperature range 4.2° − 180°K.About:
This article is published in Journal of Physics and Chemistry of Solids.The article was published on 1969-09-01. It has received 59 citations till now. The article focuses on the topics: Biexciton & Exciton.read more
Citations
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Three- and low-dimensional inorganic semiconductors
TL;DR: In this article, the structural, optical and related properties of inorganic-organic hybrid systems with a semiconductor behavior are reviewed, especially for semiconductor particles, in which the inorganic part is inorganic.
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Temperature dependence of the fast, near-band-edge scintillation from CuI, HgI2, PbI2, ZnO:Ga and CdS:In
TL;DR: In this paper, the decay time spectra, wavelengths, and intensities of fast (ns) radiative recombination in five direct, wide-bandgap semiconductors: CuI, HgI2, PbI2 and n-doped ZnO:Ga and CdS:In.
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Observation of confinement-dependent exciton binding energy of GaN quantum dots
TL;DR: The photoluminescence emission peak energy of GaN quantum dots was observed to shift to higher energy with decreasing quantum dot size as discussed by the authors, which was found to be a combination of a blueshift from the confinement-induced shift of the electronic levels and a redshift from the increased Coulomb energy induced by a compression of the exciton Bohr radius.
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The optical properties and chemical decomposition of halides with layer structures. I. crystal structures, optical properties, and electronic structure
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Extrinsic nature of the broad photoluminescence in lead iodide-based Ruddlesden-Popper perovskites.
Simon Kahmann,Eelco K. Tekelenburg,Herman Duim,Machteld E. Kamminga,Machteld E. Kamminga,Maria Antonietta Loi +5 more
TL;DR: It is suggested that in-gap states, instead of the commonly believed self-trapped excitons, are responsible for the broad band emission in crystalline samples.
References
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Journal ArticleDOI
Temperature dependence of the energy gap in semiconductors
TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
Journal ArticleDOI
Optical Properties of Semiconductors
H. R. Philipp,H. Ehrenreich +1 more
TL;DR: In this article, the real and imaginary parts of the dielectric constant and the function describing the energy loss of fast electrons traversing the materials are deduced from the Kramers-Kronig relations.
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Auger Recombination of Excitons Bound to Neutral Donors in Gallium Phosphide and Silicon
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Free exciton motion in crystals and exciton-phonon interaction
TL;DR: In this article, the exciton emission spectrum in CdS single crystals has been investigated and it was shown that excitons are subordinate to the Maxwell distribution at least up to the temperature T = 77° K and interact with phonons in accordance with the momentum conservation law.
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Fundamental optical absorption and photo-conduction in PbI2 single crystals
A.E. Dugan,H.K. Henisch +1 more
TL;DR: In this article, the authors describe measurements of the optical absorption of gel-grown PbI2 in the region from 0.5 −15 μ to 0.525 μ.