Journal ArticleDOI
Fabrication AlGaN/GaN MIS UV Photodetector by H 2 O 2 Oxidation
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TLDR
In this article, a cost-effective wet oxidation technique was adopted to grow an insulator layer for growing an aluminum oxide, and the performance of the MIS-UV-PD with different H2O2 treatment time was investigated.Abstract:
This letter demonstrates and investigates AlGaN/GaN metal–insulator–semiconductor ultraviolet photodetector (MIS-UV-PD) with a cost-effective wet oxidation technique. The H2O2 oxidation technique is adopted to grow an insulator layer. The material qualitative and semiquantitative analyses of the H2O2-grown aluminum oxide are studied by energy dispersive X-ray spectroscopy The performances of the present MIS-UV-PD with different H2O2 treatment time are also investigated. The MIS-PD with 5-min H2O2 treatment time has the optimum performances. The dark current is suppressed from 4.23 nA to 5.15 pA at −10 V. The responsivity and the UV to visible rejection ratio are enhanced to $1.03\times 10^{\mathrm {\mathbf {-2}}}$ A/W and $3.38\times 10^{\mathrm {\mathbf {5}}}$ . Moreover, the noise equivalent power and detectivity are determined to be $4.8\times 10^{\mathrm {\mathbf {-11}}}$ W and $4.52\times 10^{\mathrm {\mathbf {10 }}}$ cmHz $^{\mathrm {\mathbf {0.5}}}$ W $^{\mathrm {\mathbf {-1}}}$ . This cost-effective oxidation technique provides a simple approach to fabricate AlGaN/GaN MIS-UV-PD and its performances are also improved.read more
Citations
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Journal ArticleDOI
A Survey on Ultraviolet C-Band (UV-C) Communications
Alexander Vavoulas,Harilaos G. Sandalidis,Nestor D. Chatzidiamantis,Zhengyuan Xu,George K. Karagiannidis +4 more
TL;DR: The challenges needed to make UV-C systems able to meet the high demands of the next generation wireless networks are discussed, including the major degrading effects, such as absorption and scattering.
Journal ArticleDOI
Review of ultraviolet non-line-of-sight communication
Renzhi Yuan,Jianshe Ma +1 more
TL;DR: Three main issues of ultraviolet communication are introduced: channel model, system analysis and design, light sources and detectors and current open issues and prospective research directions are analyzed.
Journal ArticleDOI
Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors
TL;DR: In this paper, a single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors.
Journal ArticleDOI
Surface-Plasmon-Induced Ag Nanoparticles Decorated In 2 O 3 Nanowires for Low Noise Photodetectors
Amitabha Nath,Mitra Barun Sarkar +1 more
TL;DR: In this paper, a glancing angle deposition (GLAD) technique was used on indium oxide (In2O3) nanowires (NWs) over n-type Si substrate.
Journal ArticleDOI
Characterization of TiO 2 -Based MISIM Ultraviolet Photodetectors by Ultrasonic Spray Pyrolysis
TL;DR: In this paper, non-vacuum ultrasonic spray pyrolysis deposition was used to grow Al2O3/TiO2 thin film as the metal-insulator,semiconductor,insulator-metal ultraviolet photodetector (MISIM UV PD), and anatase TiO2 with 400 °C annealing was used as the active layer of the UV PD.
References
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Physics of Photonic Devices
TL;DR: In this article, the authors present an overview of the latest developments in the field of optoelectronics, including a brief history of the invention of semiconductor lasers, the Lorentz dipole model and metal plasmas, matrix optics, surface plasma waveguides, and optical ring resonators.
Journal ArticleDOI
Metal-insulator-semiconductor photodetectors.
Chu-Hsuan Lin,Chee-Wee Liu +1 more
TL;DR: The metal-insulator-semiconductor photodetector has been developed for light detection in these three regions: ultraviolet, visible, and infrared light, and the detection spectrum covers atmospheric transmission windows.
Journal ArticleDOI
High-performance visible-blind GaN-based p-i-n photodetectors
TL;DR: In this paper, high performance visible-blind GaN-based p-i-n photodetectors grown by metal-organic chemical vapor deposition on c-plane sapphire substrates were reported.