Journal ArticleDOI
Fabrication of submicrometer freestanding single‐crystal gallium arsenide and silicon structures for quantum transport studies
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TLDR
In this article, the fabrication of three-terminal freestanding GaAs metal-semiconductor field effect transistor structures is described and the low-temperature properties for semiconductors and metals such as AuPd are compared.Abstract:
Freestanding wires of submicrometer width and with lengths up to 40 μm have been fabricated from single‐crystal GaAs and Si for studies of quantum transport. Fabrication techniques are described, and the low‐temperature properties for semiconductors and metals such as AuPd are compared. Fabrication of three‐terminal freestanding GaAs metal–semiconductor field effect transistor structures is demonstrated.read more
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Journal ArticleDOI
Near-zero curvature fabrication of miniaturized micromechanical Ni switches using electron beam cross-linked PMMA
TL;DR: In this article, the fabrication and characterization of one of the smallest near-zero curvature nickel cantilevers, acting as part of a three-terminal electrostatically actuated switch across a nanoscale gap is reported.
Patent
Method of producing electrically insulated silicon structure
Yoshihiko Hirai,Kiyoshi Morimoto,Terui Yasuaki,Masaaki Niwa,Juro Yasui,Kenji Okada,Masaharu Udagawa,Koichiro Yuki +7 more
TL;DR: A silicon substrate comprises at least two surfaces extending substantially along respective crystal faces of (111) crystal orientation of the silicon, the crystal faces crossing with each other, an electrically insulating layer formed by oxidizing the silicon substrate from the surfaces, and electrically conductive portion insulated electrically by the electrically insulated layer from an outside of a silicon substrate.
Journal ArticleDOI
Electron heating effects in free-standing single-crystal GaAs fine wires
A Potts,Michael Kelly,Charles G. Smith,David G. Hasko,J. R. A. Cleaver,Haroon Ahmed,D. C. Peacock,David A. Ritchie,J. E. F. Frost,G. A. C. Jones +9 more
TL;DR: In this paper, the authors report on experiments and their analysis on electron heating effects in 3.2 mu m long free-standing fine wires (triangular cross-section with approximately=0.5 mu m side) of single-crystal GaAs doped at 1017 cm-3.
Journal ArticleDOI
Nano- and micro-technology applications of focused ion beam processing
TL;DR: In this article, focused ion beam processing in Si-based microdevices and in sensors, including high-resolution patterning of YBaCuO superconducting Josephson junction devices, is discussed.
Nanostructure fabrication
TL;DR: In this article, a range of focused ion beam techniques and processing methods designed specifically for nanofabrication are discussed and the types of structures used to investigate the physics, the physical phenomena explored with them are considered.