Journal ArticleDOI
Finite metal-sheet-resistance in contact resistivity measurements: Application to Si/TiN contacts
M. Finetti,I. Suni,M.-A. Nicolet +2 more
TLDR
In this article, it was shown that the contact resistivity of thin TiN layers changes in opposite ways for p + and n + Si after vacuum annealing at 600°C for 15 min, consistent with an increase of the barrier height φ Bn of the contact by ≅ 0.1 V to near midgap value.Abstract:
The standard transmission line model cannot be applied to evaluate the contact resistivity of thin TiN layers on highly doped p + and n + substrates because the finite sheet resistance of the TiN must be accounted for. We present two ways to include this effect using existing analytical models. The results are shown to agree with measurements where the effect of the finite sheet resistance of TiN is eliminated with a metallic overlayer. With the help of these evaluation techniques, it is shown that the contact resistivity of TiN changes in opposite ways for p + and n + Si after vacuum annealing at 600°C for 15 min. This result is consistent with an increase of the barrier height φ Bn of the contact by ≅0.1 V to near midgap value.read more
Citations
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Journal ArticleDOI
Non‐alloyed ohmic contact to n‐GaAs by solid phase epitaxy
TL;DR: In this article, a non-alloyed ohmic contact to n-type GaAs has been demonstrated and the technique of solid phase epitaxy through a transport medium has been used to obtain a metal/Ge(n+, epi)/GaAs(n, 〈100〉) heterostructure.
Journal ArticleDOI
Metal/semiconductor contact resistivity and its determination from contact resistance measurements
Andrea Scorzoni,Manuela Finetti +1 more
Journal ArticleDOI
Schottky barrier height of sputtered TiN contacts on silicon
TL;DR: In this paper, the Schottky barrier height of sputtered TiN on both p - and n -type silicon was determined by I-V and C-V measurements and the experimental results were explained in terms of sputtering damage.
Journal ArticleDOI
Floating contact transmission line modelling: An improved method for ohmic contact resistance measurement
TL;DR: In this article, a floating contact transmission line modelling (FCTLM) method is proposed for contact resistance measurement and the subsequent derivation of specific contact resistance ρc, based on a set of floating contacts with different length between two large pads.
Journal ArticleDOI
Excimer‐laser annealed ohmic contacts to n‐GaAs substrates through an ultrathin reacted layer
TL;DR: In this paper, an excimer laser has been employed to form ohmic contacts to n−GaAs substrates through an ultrathin reacted layer, and depth profiles of the contacts analyzed by an Auger electron microscope show that the thickness of the transition region between the ohmic metal and GaAs was about 100 A for AuGe and Ni/AuGe.
References
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Journal ArticleDOI
Models for contacts to planar devices
TL;DR: In this article, two basic models for rectangular contacts to planar devices, the Kennedy-Murley Model (KMM) and the Transmission Line Model (TLM), are discussed and compared.
Journal ArticleDOI
Electron tunneling and contact resistance of metal-silicon contact barriers
TL;DR: In this paper, the contact resistance of Al and Pt on n-type Si over a wide range of doping concentrations (10 18 → 2 × 10 20 cm −3 ) has been measured at both room temperature and liquid nitrogen temperature.
Journal ArticleDOI
The effects of contact size and non-zero metal resistance on the determination of specific contact resistance
Gregory S. Marlow,Mukunda B. Das +1 more
TL;DR: In this article, theoretical and experimental results concerning two sources of error in the determination of specific contact resistance of ohmic contacts to semiconductor device structures that utilize circular test patterns with varying gap length are presented.
Journal ArticleDOI
TiN and TaN as diffusion barriers in metallizations to silicon semiconductor devices
TL;DR: In this paper, the role of diffusion barriers in the contact metallurgy of silicon semiconductor devices is to prevent silicon diffusion into the top layer of the metallization process.
Journal ArticleDOI
Thermal stability of titanium nitride for shallow junction solar cell contacts
TL;DR: In this paper, the authors demonstrate the thermal stability of titanium nitride as a high-temperature diffusion barrier, and demonstrate that no degradation of cell performance is observed after the same heat treatment if the TiN layer is ≳1700 A.
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