Journal ArticleDOI
GaAs/GaSb strained‐layer heterostructures deposited by metalorganic vapor phase epitaxy
E. T. R. Chidley,S. K. Haywood,R. E. Mallard,N.J. Mason,Robin J. Nicholas,P.J. Walker,Richard J. Warburton +6 more
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In this article, the growth of GaSb/GaAs quantum wells has been attempted for the first time (7% lattice mismatch), with the antimonide layers being constrained to take on the GaAs lattice parameter in the interface plane.Abstract:
The growth of strained GaSb/GaAs quantum wells has been attempted for the first time (7% lattice mismatch), with the antimonide layers being constrained to take on the GaAs lattice parameter in the interface plane. The critical thickness for pseudomorphic growth of the strained layer was about 15 A, with further growth resulting in islands of GaSb crystallites over the wafer surface. Photoluminescence spectra and photoconductivity from both single and double wells showed a strong signal at approximately 1.3 eV, identified as a Γ point transition. This was not consistent with band structure calculations for a GaSb/GaAs well, suggesting an error in the estimation of the band offsets and/or As incorporation in the strained layer.read more
Citations
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Journal ArticleDOI
The metal-organic chemical vapor deposition and properties of III–V antimony-based semiconductor materials
TL;DR: In this paper, the authors comprehensively review the growth of III-V antimony-based semiconductor materials using metal-organic chemical vapor deposition (MOCVD) techniques.
Journal ArticleDOI
The growth of antimonides by MOVPE
TL;DR: In this article, the effect of these difficulties on the growth of the binary materials, and hence the various antimonide based devices such as lasers, LEDs, photodetectors, and Hall probes, is discussed.
Journal ArticleDOI
Geometry and interface structure of island nuclei for GaSb buffer layers grown on (001) GaAs by metalorganic vapour phase epitaxy
TL;DR: In this paper, the geometry and interface structure of island nuclei formed in the initial stages of buffer layer growth for MOVPE GaSb on (001) GaAs were investigated.
Journal ArticleDOI
Devices and desires in the 2-4 mu m region based on antimony-containing III-V heterostructures grown by MOVPE
A. Aardvark,G. G. Allogho,G. Bougnot,John P. R. David,A. Giani,S. K. Haywood,G. Hill,Philip Klipstein,F. Mansoor,N.J. Mason,Robin J. Nicholas,F. Pascal-Delannoy,M. A. Pate,Lalitha Ponnampalam,P.J. Walker +14 more
TL;DR: In this paper, a range of antimonide-based material systems suitable for providing devices responsive to 2-4 mu m wavelength radiation is reported, and the most promising devices have a turn-on voltage VTO of 0.7 V (1mA).
Journal ArticleDOI
GaSb/InAs heterojunctions grown by MOVPE
TL;DR: In this article, the effect of varying the growth conditions for the heterojunction was studied using Shubnikov-De Haas oscillations in the transverse magnetoresistance to measure the carrier concentration in the 2DEG.
References
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Journal ArticleDOI
Landolt-Börnstein, Numerical Data and Functional Relationships in Science and Technology
K. H. Hellwege,Louis C. Green +1 more
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Theoretical calculations of semiconductor heterojunction discontinuities
TL;DR: In this article, the authors performed selfconsistent density functional calculations on semiconductor heterojunctions, using ab initio nonlocal pseudopotentials, and derived valence band discontinuities for many different interfaces between both lattice matched and strained epitaxial layers.
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Growth of GaSb by MOVPE
TL;DR: In this paper, high quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour phase epitaxy (MOVPE).
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Growth of GaSb by MOVPE; Optimization of electrical quality with respect to growth rate, pressure, temperature and IIIV ratio
TL;DR: In this paper, the authors investigated the effect of various factors on the electrical properties of hetero-epitaxial GaSb on GaAs in a horizontal MOVPE reactor.
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Deformation potentials of the direct and indirect absorption edges of GaP
TL;DR: In this article, the authors present uniaxial-stress experiments performed on the direct and indirect exciton spectrum of GaP and obtain very high-stress conditions, which correspond to axial deformation.