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GaInAs/GaInAsP multiple-quantum-well integrated heterodyne receiver

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TLDR
In this paper, the first integrated heterodyne receiver capable of real-time data reception with error-free reception of FSK-modulated pseudorandom digital code at 105 Mbit/s was presented.
Abstract
We describe the fabrication and performance of the first integrated heterodyne receiver capable of actual heterodyne data reception. Integrating a continuously tunable 1.5 μm MQW-DBR laser with a single-mode directional coupler/switch and zero-bias MQW waveguide photodetectors, we have achieved error-free reception of FSK-modulated pseudorandom digital code at 105 Mbit/s.

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Citations
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Journal ArticleDOI

InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications

TL;DR: In this paper, a review of the properties of interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InGaAs-InP material system is discussed.
Journal ArticleDOI

Semiconductor photonic integrated circuits

TL;DR: A discussion is presented of the design and fabrication issues, illustrated by a number of recently demonstrated InP-based PICs.
Journal ArticleDOI

Semiconductor lasers for coherent optical fiber communications

TL;DR: The current status of semiconductor lasers used in coherent optical fiber communications is reviewed for nonexperts in the field in this article, where the issues of spectral purity, tuning, modulation, and advanced fabrication methods for photonic integration are discussed, with examples drawn from current experimental devices.
Journal ArticleDOI

Silicon photonic integration in telecommunications

TL;DR: In this paper, the authors focus on the use of silicon photonics to create transmitters and receivers for fiber-optic telecommunications, where the need to squeeze more transmission into a given bandwidth, a given footprint, and a given cost increases makes more and more economic sense.
Journal ArticleDOI

High Performance InP-Based Photonic ICs—A Tutorial

TL;DR: This tutorial traces some of the evolution of this technology that has led to an array of high-functionality InP-based PICs useful in optical sensing and communication applications.
References
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Journal ArticleDOI

Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth

TL;DR: In this article, a high power, high speed GaInAsP/InP laser operating at a 1.3μm wavelength is described with three epitaxial growth steps and has semi insulating InP blocking layers resulting in low parasitic capacitance.
Journal ArticleDOI

Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switch

TL;DR: In this paper, a GaInasp/lnP single-mode ΔK directional coupler switch with a 4-section tunable multiple-quantum-well distributed Bragg reflector laser is presented.
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