Journal ArticleDOI
Growth and morphology of GaN
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TLDR
In this paper, single crystals of GaN have been grown from the vapour phase by the reaction of Ga and NH3 at 1000-1150 °C and their morphology has been studied.About:
This article is published in Journal of Crystal Growth.The article was published on 1974-03-01. It has received 46 citations till now. The article focuses on the topics: Wurtzite crystal structure & Lattice constant.read more
Citations
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Journal ArticleDOI
Growth and applications of Group III-nitrides
TL;DR: In this article, the chemical and thermal stability of epitaxial nitride films is discussed in relation to the problems of deposition processes and the advantages for applications in high-power and high-temperature devices.
Journal ArticleDOI
A Benzene-Thermal Synthetic Route to Nanocrystalline GaN
TL;DR: A thermal reaction of Li3N and GaCl3 in which benzene was used as the solvent under pressure has been carried out for the preparation of 30-nanometer particles of gallium nitride (GaN) at 280°C, and the yield of GaN reached 80%.
Journal ArticleDOI
Crystal growth of gallium nitride in supercritical ammonia
D. R. Ketchum,Joseph W. Kolis +1 more
TL;DR: In this paper, single crystals of gallium nitride were grown in supercritical ammonia at 400°C and 2.4 kbar, and two different crystal morophologies were obtained; rods and hexagonal plates.
Journal ArticleDOI
Substrate‐orientation dependence of GaN single‐crystal films grown by metalorganic vapor‐phase epitaxy
Toru Sasaki,Sakae Zembutsu +1 more
TL;DR: In this paper, the growth kinetics of GaN layers were discussed by developing a tentative model, and the results showed that GaN has better crystallinity and higher Zn incorporation efficiency than those on the (0112) and (0001) sapphire.
Journal ArticleDOI
Ammonothermal Synthesis of III-Nitride Crystals
Buguo Wang,Michael J. Callahan +1 more
TL;DR: Ammonothermal synthesis of nitrides is reviewed in this paper, with an emphasis on gallium and aluminum nitride due to their important applications as direct wide band gap semiconductors.
References
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Journal ArticleDOI
On the relations between structure and morphology of crystals. I
P. Hartman,W. G. Perdok +1 more
TL;DR: In this paper, Hartman and Perdok made an attempt to find relations between crystal structure and crystal morphology on an energy basis, and concluded that the morphology of a crystal is governed by chains of strong bonds running through the structure.
Journal ArticleDOI
Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
TL;DR: In this paper, low-temperature absorption, reflectance, and emission spectra from a wide range of epitaxially grown GaN are reported, which are far superior to any previously available, have spectral details that allow a definitive analysis.
Journal ArticleDOI
Über die Kristallstrukturen von Cu3N, GaN und InN Metallamide und Metallnitride
Robert Juza,Harry Hahn +1 more
TL;DR: In this article, Kubisch et al. reported that Cu3N kristallisiert kubisch, Gitterkonstante a = 3,807 ± 0,004 A, ein Molekul in dem Elementarkorper, dr = 6,12 Atomlagen.
Journal ArticleDOI
Stability of the Wurtzite Structure
TL;DR: In this article, a simple qualitative model is proposed to account for the variability in the ratio of the ratio from the ideal value of 1.633 to the true value of 0.1%.
Journal ArticleDOI
Refractive index of GaN
TL;DR: In this article, the refractive index of GaN and its temperature dependence have been measured using plane-parallel platelets with E ⊥ c. The difference between the two values is 1.5 ± 0.2% at 5000 A. The diffuse reflexion spectrum has been measured and the temperature dependence of the absorption edge is plotted.
Related Papers (5)
The preparation and properties of vapor- deposited single-crystalline GaN
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