scispace - formally typeset
Journal ArticleDOI

Growth instabilities in the deposition of amorphous films

N. J. Shevchik
- 01 Jul 1973 - 
- Vol. 12, Iss: 2, pp 141-149
TLDR
In this paper, the attractive forces between the oncoming atoms and those deposited become important in determining the growth of the film when surface diffusion and many atom rearrangement processes are suppressed (precisely the conditions that lead to the formation of amorphous films).
Abstract
It is proposed that during the atom-by-atom deposition of a film, the attractive forces between the oncoming atoms and those deposited become important in determining the growth of the film when surface diffusion and many atom rearrangement processes are suppressed (precisely the conditions that lead to the formation of amorphous films). The trajectories of the oncoming atoms are distorted in such a way that the formation and growth of surface irregularities are favored. Since the deflection depends inversely upon the incident kinetic energy of the atoms, sputtered films should be smoother than evaporated films for equal substrate temperatures. It is also argued that this mechanism can lead to the formation of voids.

read more

Citations
More filters
Journal ArticleDOI

Geometry of thin‐film morphology

TL;DR: The columnar morphologies commonly found in all vapor-deposited thin films prepared under low mobility conditions have been classified by several variations of what have been termed structure zone models.
Journal ArticleDOI

Structural investigations of amorphous transition element films I. Scanning electron diffraction study of cobalt

TL;DR: In this paper, thin films of cobalt, prepared in ultra high-vacuum at 4 K and examined in situ by scanning electron diffraction, are shown to be amorphous with a radial distribution function similar to that obtained theoretically by serial deposition of atoms in the computer-simulated model developed by Bennett.
Journal ArticleDOI

A two-dimensional Monte Carlo model for thin film growth by oblique evaporation: simulation of two-component systems for the example of Co-Cr

TL;DR: In this article, a two-dimensional computer model is developed which includes surface relaxation by thermally induced surface diffusion and atomic attraction for a two component system, and an attempt was made to link the model interaction energies to real bonding energies in Co---Cr thin films.
Journal ArticleDOI

Computer simulation of the post-nucleation growth of thin amorphous germanium films

TL;DR: In this article, the early stage of formation of amorphous germanium films by vapour deposition is simulated and an upper limit is obtained for the maximum edge migration distance for which irregularly shaped particles can still be formed within their model.

Computer simulation of the post-nucleation growth of thin amorphous germanium films.

TL;DR: In this paper, the early stage of formation of amorphous germanium films by vapour deposition is simulated and an upper limit is obtained for the maximum edge migration distance for which irregularly shaped particles can still be formed within their model.
References
More filters
Book

Thin film phenomena

Journal ArticleDOI

Evidence of Voids Within the As-Deposited Structure of Glassy Silicon

TL;DR: In this article, electron diffraction data from amorphous silicon is presented, which cannot be reconciled with the intensity profiles derived from small-crystallite models based on the diamond structure.
Journal ArticleDOI

High-Resolution Electron Microscope Observation of Voids in Amorphous Ge

TL;DR: In this article, the existence of void networks in amorphous Ge films formed at substrate temperatures of 25 and 150 C and the absence of a void network in higher substrate temperatures at 200 and 250 C were shown.
Journal ArticleDOI

The structure of amorphous Ge

TL;DR: In this paper, small angle X-ray scattering experiments, along with radial distribution analysis, have been carried out on amorphous Ge prepared by three methods: evaporation, sputtering and electrodeposition.