Journal ArticleDOI
Growth morphology and crystallographic orientation of β-SiC films formed by chemical conversion
A.J. Learn,I. H. Khan +1 more
TLDR
In this article, the surface growth morphology and crystallographic orientation of beta-SiC films formed by chemical conversion and heating were studied and shown to be stable in terms of growth morphology.About:
This article is published in Thin Solid Films.The article was published on 1970-03-01. It has received 30 citations till now.read more
Citations
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Journal ArticleDOI
Conversion of Si to epitaxial SiC by reaction with C2H2
C. J. Mogab,H. J. Leamy +1 more
TL;DR: In this article, the growth of β-SiC films on Si by reaction of a Si single crystal with C2H2 has been studied for the conditions 10−7 ≤PC2H 2≤5×10−4 Torr, 800≤T≤1100°C, in both high and ultrahigh-vacuum chambers.
Journal ArticleDOI
Growth mechanism of polycrystalline β‐SiC layers on silicon substrate
TL;DR: In this paper, the surface of monocrystalline silicon was chemically converted with hydrocarbon to polycrystalline β-silicon carbide, and the growth mechanism was investigated by means of 14C tracer method.
Journal ArticleDOI
Heteroepitaxial growth of single crystalline 3C‐SiC on Si substrates by gas source molecular beam epitaxy
TL;DR: In this paper, the growth of 3C-SiC on Si substrates by gas source molecular beam epitaxy was investigated, and an amorphous-like layer was observed at 870°C.
Journal ArticleDOI
Chemically-formed buffer layers for growth of cubic silicon carbide on silicon single crystals
TL;DR: In this article, buffer layers of cubic silicon carbide were formed by reaction of (100) Si substrates with propane in hydrogen at 1380-1400°C.
Journal ArticleDOI
Structure and annealing properties of silicon carbide thin layers formed by implantation of carbon ions in silicon
TL;DR: In this paper, an investigation was made of the formation of crystalline SiC thin layers by implantation of carbon ions in silicon and their development, and electron microscopy and diffraction studies showed that α-SiC was formed in some regions of asimplanted layers.
References
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Journal ArticleDOI
Infrared Properties of Cubic Silicon Carbide Films
TL;DR: In this paper, the dispersion parameters for the fundamental resonance at 12.60 microns were determined for the ordinary ray in the hexagonal $\ensuremath{\alpha}$-II form.
Journal ArticleDOI
The Thermal Decomposition of Silane
Journal ArticleDOI
Epitaxial Growth of Silicon from the Pyrolysis of Monosilane on Silicon Substrates
B. A. Joyce,R. R. Bradley +1 more
Journal ArticleDOI
The growth of single‐crystal films of cubic silicon carbide on silicon
I. H. Khan,R. N. Summergrad +1 more
TL;DR: In this paper, a cubic silicon carbide was grown on silicon substrates within the temperature range 800 − 1000°C in high and ultrahigh vacuum by the reaction of unsaturated hydrocarbons, C2H and C 2H4 with silicon.
Journal ArticleDOI
Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
TL;DR: In this article, the growth rate of the SiC film is measured as a function of the temperature and the partial pressure of methane, and the results show that the film thickness is proportional to t 1/2(ln p+A)1/2×exp (-4q/2kT) where t is reaction time, p is partial pressure, T is reaction temperature and A is constant.
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The growth of single‐crystal films of cubic silicon carbide on silicon
I. H. Khan,R. N. Summergrad +1 more