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Journal ArticleDOI

Growth of AgGaSe2 thin films

S.M. Patel, +1 more
- 01 Aug 1985 - 
- Vol. 3, Iss: 11, pp 440-445
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TLDR
In this article, the effects of substrate temperature on the structural properties, compositional analysis and electrical resistivity of polycrystalline stoichiometric films of AgGaSe 2 have been studied.
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This article is published in Materials Letters.The article was published on 1985-08-01. It has received 20 citations till now. The article focuses on the topics: Carbon film & Thin film.

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Citations
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Journal ArticleDOI

Thickness dependent physical properties of close space evaporated In2S3 films

TL;DR: In this article, the effect of film thickness on the structural, morphological, optical and electrical properties of close space evaporated In2S3 layers has been studied and detailed study of these results was presented and discussed.
Journal ArticleDOI

Substrate temperature dependent physical properties of In2S3 films

TL;DR: In this article, the chemical composition, structure, surface morphology, optical and electrical studies of indium sulfide (In2S3) layers were carried out using appropriate techniques.
Journal ArticleDOI

Optical absorption studies on AgInSe2 and AgInTe2 thin films

TL;DR: The analysis of optical spectra of AgInSe 2 and AgInTe 2 thin films has been discussed in this article, where the extinction coefficient (k ) and refractive index (n ) were also calculated for both compositions.
Journal ArticleDOI

Synthesis and physical behaviour of In2S3 films

TL;DR: In this article, the effect of substrate temperature on composition, structure, morphology, electrical and optical properties of the as-grown indium sulfide films has been studied and the results showed that the films grown at 300°C had an average roughness of 1.43nm.
Journal ArticleDOI

Characterization of p-AgGaSe2/n-CdS thin film heterojunction

TL;DR: In this paper, p-AgGaSe 2 /n-CdS heterojunctions were fabricated and the J - V, C - V and spectral response characteristics were studied and typical cell parameters obtained were: V oc =510 mV, J sc = 13.8 mA/cm 2, FF=0.55 and gh =4.5%.
References
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Journal ArticleDOI

Theory of Photoconductivity in Semiconductor Films

TL;DR: In this paper, the authors analyzed a model which incorporates the above characteristics of a photoconductive film, except for the space charge effects, and derived numerical values for responsivity, noise, and sensitivity.
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Room‐Temperature Electrical Properties of Ten I‐III‐VI2 Semiconductors

TL;DR: In this paper, the room temperature electrical properties of ten I•III•VI2 (I=Cu, Ag; III=Al, Ga, In; VI=S, Se) compounds are presented.
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Electronic Structure of AgIn Se 2 and CuIn Se 2

TL;DR: In this paper, the authors report electroreflectance and photoluminescence studies of the chalcopyrite compounds AgIn${\mathrm{Se}}_{2}$ and CuIn${Se}µ, showing that both compounds have direct energy gaps.
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Growth and optical properties of CuGaTe2 thin films

TL;DR: In this paper, a model for the band structure of CuGaTe2 near the point Γ of the Brillouin zone was proposed and three transverse optical mode frequencies were obtained from an analysis of the optical transmission spectra in the photon energy range from 1 to about 3 eV.
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Spray pyrolysis of CuInSe2 and related ternary semiconducting compounds

TL;DR: In this paper, a spray pyrolysis-based polycrystalline sphalerite structure solid solution is indicated for the entire four-component system, which suggests the possibility of tailoring properties such as lattice parameter, energy gap and conductivity type to produce heterojunctions suitable for low-cost solar cells by spray pyrogeneration.
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