Journal ArticleDOI
H2-induced changes in electrical conductance of β-Ga2O3 thin-film systems
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TLDR
In this article, the changes in conductance of polycrystalline, undoped β-Ga2O3 thin films in the temperature range of 400-650° C are described.Abstract:
H2-induced changes of electrical conductivity in polycrystalline, undoped β-Ga2O3 thin films in the temperature range of 400–650° C are described. The sheet conductance of these films depends reversibly, according to a power law σ□ ∼ p
1/3, on the partial pressure of hydrogen in the ambient atmosphere of the Ga2O3 film. A bulk vacancy mechanism is excluded by experiments and it is shown that the interaction is based on a surface effect. Changes in conductance are discussed to result from the formation of an accumulation layer due to chemisorption on the grain surfaces. Typical coverages are determined to be approximately 10−4 ML for pH2=0.05 bar and T=600° C. A possible explanation of the σ□ ∼ p
1/3 power law is provided.read more
Citations
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Book ChapterDOI
Formation of Oxide Nanowires by Thermal Evaporation and Their Application to Gas Sensors
TL;DR: In this article, three types of evaporation method for forming oxide nanowires and then investigated their structure were developed. And the effect of the thickness and length of the nanowire was investigated.
Journal ArticleDOI
Conductivity of Ga2O3-GaAs Heterojunctions
TL;DR: In this paper, the effect of annealing in argon at temperatures of T an = 700-900°C on the I-V characteristics of metal-Ga2O3-GaAs structures is investigated.
Journal ArticleDOI
Oxygen Sensors Based on Thin Films of Gallium Oxide Modified with Silicon
A. V. Almaev,E. V. Chernikov,B. O. Kushnarev,Nikita N. Yakovlev,P. M. Korusenko,Sergey N. Nesov +5 more
TL;DR: The results of an investigation of the electrical resistivity of Ga2O3 thin films modified with silicon under the influence of oxygen in the range of O2 from 9 to 100 vol. % and changes in the heating temperature of structures from 25 to 700 °C were presented in this paper.
Journal ArticleDOI
Effect of Si<sup>+</sup> Ion Implantation in <i>α</i>-Ga<sub>2</sub>O<sub>3</sub> Films on Their Gas Sensitivity
TL;DR: The effect of the Si+ ion implantation on the gas-sensing properties of single-crystal (0001) has been studied in this article , where it is established that irradiation with a dose of $^{-{2}}$
References
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BookDOI
The Oxide handbook
TL;DR: The structure of the second edition of this handbook has not undergone any major changes; however, certain corrections and improvements have been made in the content of certain chapters.
Book
Chemical sensing with solid state devices
Marc J. Madou,S. Roy Morrison +1 more
TL;DR: Silicon Based Chemical Sensors as mentioned in this paper : Gas Sensors based on Semiconductor Powders are used for solid state chemical sensor applications, and they have been shown to be useful in many applications.
Journal ArticleDOI
Polymorphism of Ga2O3 and the System Ga2O3—H2O
Journal ArticleDOI
Crystal Structure of β‐Ga2O3
TL;DR: The crystal structure of β•Ga2O3 has been determined from single-crystal 3D x-ray diffraction data as mentioned in this paper, and the most probable space group to which the crystal belongs is C2h3-C2/m.