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Journal ArticleDOI

Harmonic generation using the non-linearity in the hot carrier characteristics of GaAs

D. Chattopadhyay, +1 more
- 01 Nov 1969 - 
- Vol. 27, Iss: 5, pp 443-447
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TLDR
In this paper, an approximate theory for the third harmonic generation in GaAs under the application of a large high frequency sinusoidal electric field was developed, and it was shown that the ratio of third harmonic to the fundamental frequency currents is 0-22 and 015 at fundamental frequencies of 100 GHZ and 450 GHZ respectively, for a field amplitude of 6-7 kv/cm.
Abstract
An approximate theory has been developed for third harmonic generation in GaAs under the application of a large high frequency sinusoidal electric field. The ratio of the third harmonic to the fundamental frequency currents is found to be 0-22 and 015 at fundamental frequencies of 100 GHZ and 450 GHZ respectively, for a field amplitude of 6-7 kv/ cm.

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Citations
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Microwave harmonic generation using the non-linearity of negative resistance in n-type GaAs under a small-signal excitation†

TL;DR: In this paper, an analysis by transport theory has been performed for microwave 2nd-harmonic generation using the nonlinearity of negative resistance in n-type GaAs under a small-signal excitation.
Journal ArticleDOI

Third harmonic generation using the hot-electron non-linearity of semiconductors

TL;DR: In this paper, the third harmonic components in the reflected and transmitted waves produced by nonlinear interaction of a plane-polarized electromagnetic wave with a semiconducting sample of finite thickness have been studied.
References
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Journal ArticleDOI

Hot carrier a.c. conductivity and harmonic generation in semiconductors

TL;DR: In this article, the frequency dependence of hot carrier a.c. conductivity of covalent semiconductors is studied considering scattering due to both acoustic and optical phonons.
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