Journal ArticleDOI
Heterostructure barrier varactor simulation using an integrated hydrodynamic device/harmonic-balance circuit analysis technique
TLDR
In this article, a novel harmonic-balance circuit analysis technique with a physics-based hydrodynamic device simulator was proposed to simulate the large-signal time-dependent behavior of GaAs-AlGaAs Heterostructure Barrier Varactor (REV) frequency tripler circuits.Abstract:
Accurate and efficient simulations of the large-signal time-dependent behaviour of GaAs-AlGaAs Heterostructure Barrier Varactor (REV) frequency tripler circuits have been obtained. This is accomplished by combining a novel harmonic-balance circuit analysis technique with a physics-based hydrodynamic device simulator. The integrated HBV hydrodynamic device/harmonic-balance circuit simulator allows HBV multiplier circuits to be co-designed from both a device and a circuit point of view. Comparisons are made with the experimental results of Choudhury et al. (see IEEE Trans. Microwave Theory Tech., vol. 41, no. 4, p. 595-9, 1993) for GaAs-AlGaAs HBV frequency triplers operating near 200 GHz. These comparisons illustrate the importance of representing active devices with physics-based numerical device models rather than analytical device models based on lumped quasi-static equivalent circuits. >read more
Citations
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Journal ArticleDOI
Planar multibarrier 80/240-GHz heterostructure barrier varactor triplers
TL;DR: In this article, a planar four barrier GaAs/Al/sub 0.7/Ga/Sub 0.3/As heterostructure barrier varactors for frequency tripling from 80 to 240 GHz have been fabricated using a process in which the device surface channel is etched prior to the formation of the contact pad-to-anode air-bridge finger.
Journal ArticleDOI
Gaas devices and circuits for terahertz applications
TL;DR: In this paper, the status of terahertz diode technology with emphasis on the recent results which define the cutting edge of diode performance is reviewed and improvements that are needed to ensure that this technology not only meets the expanding needs of scientific researchers, but also is extended to future military and commercial applications.
Journal ArticleDOI
DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor
TL;DR: In this article, the DC and large-signal time-dependent electron transport properties of Heterostructure Barrier Varactors (HBVs) are investigated using a physical model which combines drift-diffusion current transport through the heterostructure bulk with thermionic and thermionic-field emission currents imposed at the abrupt heterointerfaces in a fully self-consistent manner.
Journal ArticleDOI
Monte Carlo harmonic-balance and drift-diffusion harmonic-balance analyses of 100-600 GHz Schottky barrier varactor frequency multipliers
TL;DR: In this article, a harmonic-balance technique has been integrated into a drift-diffusion numerical simulator and, for the first time, a Monte Carlo numerical device simulator for the selfconsistent study of electron transport phenomena as well as the study of device performance.
Journal Article
An All Solid-State 1 THz Radiometer For Space Applications
R. Zimmermann,T. Rose,T. Crowe +2 more
TL;DR: A heterodyne receiver at 1 THz is described, whose components are waveguide mixer and frequency multipliers with Schottky-diodes as mixing and multiplying elements with a breakthrough in local-oscillator development.
References
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Book
Iterative Solution of Nonlinear Equations in Several Variables
J.M. Ortega,Werner C. Rheinboldt +1 more
TL;DR: In this article, the authors present a list of basic reference books for convergence of Minimization Methods in linear algebra and linear algebra with a focus on convergence under partial ordering.
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Numerical analysis of heterostructure semiconductor devices
TL;DR: In this paper, a numerical method for analyzing heterostructure semiconductor devices is described, where the macroscopic semiconductor equations for materials with position-dependent dielectric constant, bandgap, and densities-of-states are first cast into a form identical to that commonly used to model heavily doped semiconductors.
Journal ArticleDOI
Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface
Kazushige Horio,H.Yanai H.Yanai +1 more
TL;DR: In this article, a numerical model for heterojunctions is discussed in which current transport across the heterojunction interface is taken into account by using thermionic emission current in series with drift-diffusion current in the bulk.
Journal ArticleDOI
Quantum-Barrier-Varactor Diodes for High-Efficiency Millimetre-Wave Multipliers
Erik L. Kollberg,Anders Rydberg +1 more
TL;DR: In this article, the quantum-barrier-varactor diode (QBV diode) was proposed for use in multipliers for millimetre waves, where the capacitance/voltage characteristic is symmetric and only odd harmonics are obtained.
Topics in the Optimization of Millimeter-Wave Mixers
TL;DR: In this paper, a user oriented computer program for the analysis of single-ended Schottky diode mixers is described, which is used to compute the performance of a 140 to 220 GHz mixer and excellent agreement with measurements at 150 and 180 GHz.