Journal ArticleDOI
High‐energy conversion efficiency amorphous silicon solar cells by photochemical vapor deposition
TLDR
In this paper, a three-separate chamber system was developed to reduce the contamination of the dopant elements as well as oxygen or water originated by the loading and unloading procedure.Abstract:
Hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition. A three‐separate‐chamber system was newly developed to reduce the contamination of the dopant elements as well as oxygen or water originated by the loading and unloading procedure. Wide optical band‐gap hydrogenated amorphous silicon carbide was prepared using acetylene (C2H2) for the p layer. The deposition conditions for each layer were optimized and the highest‐energy conversion efficiency of 9.64% was obtained. This high conversion efficiency was mainly attributed to the large short‐circuit current which indicated that the quality of the i layer is reasonably good.read more
Citations
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Patent
Method for producing an electronic device having a multi-layer structure
TL;DR: In this article, a method for producing an electronic device having a multi-layer structure comprising one or more valence electron controlled semiconductor thin layers formed on a substrate comprises forming at least one of the components according to the plasma CVD method and forming the other constituent layers according to introducing a gaseous starting material for formation of a deposited film and an oxidizing halogenic oxidizing agent having the property of oxidizing said starting material into a reaction space to effect chemical contact therebetween to thereby form a plurality of precursors including a precursor in an excited state and transferring
Book ChapterDOI
Amorphous Silicon-Based Solar Cells
Xunming Deng,Eric A. Schiff +1 more
TL;DR: In this paper, the authors describe the diamond lattice of crystal silicon as a regular array or lattices, which must be consistent with the underlying chemical bonding properties of the atoms, such as the four covalent bonds of a silicon atom.
Journal ArticleDOI
Use of a carbon‐alloyed graded‐band‐gap layer at the p/i interface to improve the photocharacteristics of amorphous silicon alloyed p‐i‐n solar cells prepared by photochemical vapor deposition
TL;DR: Amorphous silicon alloyed p-i-n solar cells have been fabricated using a separate chamber photochemical vapor deposition system as discussed by the authors, and the photocharacteristics of such cells were modestly improved by the addition of a carbon-alloyed graded bandgap layer at the p(a−SiC:H)/i(a•Si:H) heterointerface.
Journal ArticleDOI
Deposition of high‐quality a‐Si:H by direct photodecomposition of Si2H6 using vacuum ultraviolet light
Takashi Fuyuki,Kai-Ying Du,Shingo Okamoto,Sadayuki Yasuda,Tsunenobu Kimoto,Masahiro Yoshimoto,Hiroyuki Matsunami +6 more
TL;DR: In this article, Si:H films were deposited by direct photochemical vapor deposition using vacuum ultraviolet lights emitted from deuterium (161 nm) and Xe (147 nm) discharge lamps.
References
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Journal ArticleDOI
Photochemical vapor deposition of undoped and n‐type amorphous silicon films produced from disilane
TL;DR: In this article, a photo-CVD undoped and P-doped solar cell was fabricated using undoped amorphous silicon films and showed a conversion efficiency of 4.39% under AM1 insolation.
Journal ArticleDOI
Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition
TL;DR: Amorphous silicon films have been prepared through mercury-photosensitized decomposition of monosilane gas at low temperatures as discussed by the authors, and they show optical and electrical properties comparable with those of the best films prepared by plasma chemical vapor deposition.
Journal ArticleDOI
Wide band-gap, fairly conductive p-type hydrogenated amorphous silicon carbide films prepared by direct photolysis; solar cell application
TL;DR: In this article, a wide optical band gap (2.0-2.3 eV) undoped and boron-doped hydrogenated amorphous silicon carbide (aSiC:H) films have been prepared by both direct photo and rf glow discharge (GD plasma) decomposition of pure methylsilanes or acetylene and disilane gas mixtures.
Journal ArticleDOI
Amorphous silicon solar cells fabricated by photochemical vapor deposition
TL;DR: In this article, a hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition, which showed high energy conversion efficiency of 8.29% under AM1, 100mW/cm2 insolation.