Journal ArticleDOI
High power DPDT antenna switch MMIC for digital cellular systems
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TLDR
In this paper, dual-pole double-throw (DPDT) switch GaAs JFET monolithic microwave integrated circuits (MMICs) for digital cellular handsets were proposed.Abstract:
In this paper, we propose two new types of dual-pole double-throw (DPDT) switch GaAs JFET monolithic microwave integrated circuits (MMICs) for digital cellular handsets. These ICs have the excellent characteristics of low insertion loss and high power handling capability, even with a low control voltage by stacking three JFETs with shallow V/sub p/ and using a novel bias circuit using p-n junction diodes. One DPDT switch IC has two shunt FET blocks and can achieve high isolation without external parts. An insertion loss less than 0.6 dB and isolation over 25 dB up to 2 GHz were achieved. P/sub 1dB/ was about 35 dBm even with a control voltage of 0/3 V. Another DPDT switch IC utilizes parallel resonance of external inductors and parasitic capacitance between the drain and the source of the OFF-state FETs. By attaching 15 nH inductors, for example, the IC exhibited an insertion loss as low as 0.4 dB, an isolation of better than 40 dB at 1.5 GHz, a bandwidth of about 400 MHz for 20 dB isolation, and P/sub 1dB/ of about 34 dBm with the 0/3 V control.read more
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References
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Journal ArticleDOI
A GaAs high-power RF single-pole double-throw switch IC for digital mobile communication system
TL;DR: The high-power GaAs monolithic RF switch IC reported here handles over 5W (PldB: 37dBm) with insertion loss less than 1.0 dB using a circuit to feed forward the signal to the control gate.
Journal ArticleDOI
A low-voltage, high-power T/R-switch MMIC using LC resonators
TL;DR: In this article, a 1.9 GHz LC-resonant T/R switch was proposed for high power/low-distortion operation at a low control voltage, where inductors, capacitors, and switch FET's are incorporated in TX and RX arms to provide a reverse control scheme that removes the rf-voltage limitation in the transmit mode.
Proceedings ArticleDOI
Novel high performance SPDT power switches using multi-gate FET's
TL;DR: In this paper, a 16watt single-pole double-throw (SPDT) MESFET based switch is presented, which is unique in its use of a multi-gate FET device which can be fabricated on a standard production switch process.
Journal ArticleDOI
High-performance GaAs switch IC's fabricated using MESFET's with two kinds of pinch-off voltages and a symmetrical pattern configuration
TL;DR: GaAs MESFET switch IC's operating at low control voltages of 0/-3 V and +3/0 V have been developed for use in Personal Handy Phones using the 1.9 GHz band with excellent RF characteristics and no need for external circuit installation.
Proceedings ArticleDOI
SPDT switch MMIC using E/D-mode GaAs JFETs for personal communications
TL;DR: In this paper, the design and performance of a monolithic GaAs SPDT switch applicable to a time division duplexer for personal communications are described, and an excellent small insertion loss of less than 0.7 dB and a high isolation of 30 dB have been achieved at 1.9 GHz.