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Journal ArticleDOI

High-Voltage Damage and Low-Frequency Noise in Thick-Film Resistors

E. Stevens, +2 more
- 01 Dec 1976 - 
- Vol. 12, Iss: 4, pp 351-356
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TLDR
In this paper, the results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented and interpreted, showing that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the material.
Abstract
The results from a unified study of high-voltage damage and low-frequency noise in thick-film resistors are presented. Material microstructure and the mechanisms for charge transport and I/f noise are discussed to provide a basis for the interpretation of the experimental results. Experimental results showing a definite relationship between high-voltage damage and low-frequency noise are presented and interpreted. It is shown that noise parameters are extremely sensitive to the condition of interfacial regions within the conductive phase of the thick-film material. Because of this sensitivity to conductive-phase microstructure, noise measurements are recommended as a diagnostic tool for research on thick-film materials and as a diagnostic tool for quality-assurance efforts in the production environment.

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Citations
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Book ChapterDOI

Electrical Noise as a Measure of Quality and Reliability in Electronic Devices

TL;DR: This chapter is devoted to an account of the success that has been obtained in using noise as a nondestructive indicator of reliability.
Journal ArticleDOI

Criteria of low-noise thick-film resistors

TL;DR: In this paper, a simple model of the noise of a thick-film resistor leads to two limiting cases: the relative noise is proportional to the sheet resistance, R□ and the conduction is mainly dominated by the current constrictions in the contact areas between grains.
Journal ArticleDOI

Excess noise and refiring processes in thick-film resistors

TL;DR: Excess noise in thick-film resistors (TFRs) fired from one to ten times under the same firing profile has been investigated in this article, and the changes in structure and composition, which are responsible for variations in sheet resistivity and TCR, affect also the noise index of TFRS, sometimes in a substantial way.
Journal ArticleDOI

Thick-film resistor quality indicator based on noise index measurements

TL;DR: In this paper, a quality indicator for thick-film resistors based on noise index and resistance measurements is proposed, which correlates resistor transport and noise characteristics and has mobility dimensions, titled it to be noise reduced mobility.
Journal ArticleDOI

High-voltage pulse stressing of thick-film resistors and noise

TL;DR: It is shown that low-frequency noise is more sensitive to this kind of resistor stressing than resistance and that measured values of noise index are in agreement with resistance noise spectrum results.
References
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Proceedings Article

Physics of semiconductor devices

S. M. Sze
Journal ArticleDOI

1/ƒ noise is no surface effect

TL;DR: In this paper, the authors show that 1/ε noise is inversely proportional to the total number of mobile charge carriers in homogeneous samples, and exclude surface effects as the main source of 1/ǫ noise.
Journal ArticleDOI

Electrical Transport Properties of Ir O 2 and Ru O 2

TL;DR: In this paper, the electrical resistivities of single crystals of Ru${\mathrm{O}}_{2}$ and Ir${O}$ in the temperature range 10-1000
Journal ArticleDOI

1/⨍ noise in continuous thin gold films

TL;DR: In this article, the authors measured the noise on small samples of continuous gold films as a function of sample thickness and of temperature, and showed that the noise is inversely proportional to the total number of electrons.
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