Journal ArticleDOI
Hydrogenic impurity states in a quantum well: A simple model
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TLDR
A variational calculation of hydrogenic impurity states in a quantum well has been performed in this article, where the binding energy of donor (acceptor) levels is calculated as a function of layer thickness and of the impurity position.Abstract:
A variational calculation of hydrogenic impurity states in a quantum well has been performed. The binding energy of donor (acceptor) levels is calculated as a function of layer thickness and of the impurity position. It is found that the ground impurity state degeneracy with respect to the impurity position is lifted, leading to the formation of some sort of an "impurity band." The density of states of this impurity band exhibits one or two peaks energetically located at the "band" extrema. This one-dimensional feature can be evidenced in the optical absorption associated with valence subband\ensuremath{\rightarrow}donor transitions, whereas acceptor\ensuremath{\rightarrow}conduction processes are almost featureless. In the case of conduction\ensuremath{\rightarrow}acceptor luminescence a smooth curve is obtained for degenerate electronic distribution, whereas nondegenerate electron\ensuremath{\rightarrow}trapped hole recombination spectra should again exhibit a double peak.read more
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Growth and optical properties of nanometer‐scale GaAs and InAs whiskers
Kenji Hiruma,Masamitsu Yazawa,Toshio Katsuyama,Kensuke Ogawa,Keiichi Haraguchi,Masanari Koguchi,Hiroshi Kakibayashi +6 more
TL;DR: In this paper, the growth process, crystal structure, and optical properties of ultrathin GaAs and InAs wires (whiskers) as thin as 15-40 nm and about 2 μm long are reviewed and discussed.
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Electronic states in semiconductor heterostructures
Gérald Bastard,J.A. Brum +1 more
TL;DR: In this paper, the electronic energy levels of semiconductor heterostructures within the envelope function scheme were described and the Coulombic bound states in heterostructure (impurities, excitons) were discussed, and the effect of a static electric field on the carrier and exciton energy levels in semiconductor quantum wells.
Journal ArticleDOI
Single dopants in semiconductors
TL;DR: The huge advances in the past decade towards observing, controllably creating and manipulating single dopants, as well as their application in novel devices which allow opening the new field of solotronics (solitary dopant optoelectronics).
Journal ArticleDOI
Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures
Ronald L. Greene,K. K. Bajaj +1 more
TL;DR: In this paper, the ground state and four excited states of a hydrogenic impurity in quantum well structures are calculated using a variational approach using a single slab of GaAs sandwiched between two semi-infinite slabs of Ga1−xAlxAs.
Journal ArticleDOI
Hydrogen impurities in quantum well wires
Jerry W. Brown,Harold N. Spector +1 more
TL;DR: In this paper, the binding energy of hydrogenic impurites in a quantum well wire has been calculated as a function of the width of the wire and the location of the impurity with respect to the axis of wire.
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