IIIB-2 The fabrication submicrometer MOSFET's using laser doping

The fabrication of ultra-shallow high-concentration boron profiles in silicon has been carried out utilizing a XeCl excimer laser. The Gas Immersion Laser Doping (GILD) process relies on a dopant species, in this case diborane (B 2 H 6 ), to be adsorbed on the clean silicon surface and subsequently driven in during a melt/regrowth process initiated upon exposure to the short laser pulse. Secondary Ion Mass Spectrometry and spreading resistance profiles show peak boron concentrations from 5 × 1019cm-3to 5 × 1020cm-3depending on the number of laser pulses, with junction depths from 0.08 to 0.16 µm depending on the laser energy. Electrical characteristics show essentially ideal diode behavior following a 10-s 950°C anneal.

Ultra-shallow high-concentration boron profiles for CMOS processing

The first experimental mapping of ion beam channels near the Si 〈001〉 axis is reported. All features are identified by theoretical plots of silicon planar channels and axial channels.

IIIB-2 The fabrication submicrometer MOSFET's using laser doping

References

Ultra-shallow high-concentration boron profiles for CMOS processing

Channeling of ions near the silicon 〈001〉 axis

Related Papers (5)

Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)

γ—Radiation effects on MOSFET's fabricated with NMOS Submicrometer technology

Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique

Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Fabrication of 60-nm plasma doped CMOS transistors

IIIB-2 The fabrication submicrometer MOSFET's using laser doping

References

Ultra-shallow high-concentration boron profiles for CMOS processing

Channeling of ions near the silicon 〈001〉 axis

Related Papers (5)

Fabrication of submicrometer MOSFET's using gas immersion laser doping (GILD)

&#947;&#8212;Radiation effects on MOSFET's fabricated with NMOS Submicrometer technology

Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique

Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Fabrication of 60-nm plasma doped CMOS transistors

γ—Radiation effects on MOSFET's fabricated with NMOS Submicrometer technology