Journal ArticleDOI
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
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TLDR
In this article, a high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with detection wave band in 6.7-11.5 μm and operating temperature up to 260 K under normal incident illumination has been demonstrated.Abstract:
A high-sensitivity In0.6Ga0.4As/GaAs quantum-dot infrared photodetector (QDIP) with detection wave band in 6.7–11.5 μm and operating temperature up to 260 K under normal incident illumination has been demonstrated. The peak detection wavelength shifts from 7.6 to 8.4 μm when the temperature rises from 40 to 260 K. The background limited performance (BLIP) detectivity (DBLIP*) measured at Vb=−2.0 V, T=77 K, and λp=7.6 μm was found to be 1.1×1010 cm Hz1/2/W, with a corresponding responsivity of 0.22 A/W. The high operating temperature is attributed to the very low dark current and long carrier lifetime in the quantum dots of this device. The results show that this QDIP can operate at high temperature without using the large band gap material such as AlGaAs or InGaP as blocking barrier to reduce the device dark current.read more
Citations
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Journal ArticleDOI
High detectivity InAs quantum dot infrared photodetectors
TL;DR: In this paper, the authors reported a high detectivity of 3×1011 cm 1/2/W at 78 K for normal-incidence quantum dot infrared photodetectors with ten layers of undoped InAs/InGaAs/GaAs active regions.
Journal ArticleDOI
Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
TL;DR: In this paper, a tunneling quantum-dot infrared photodetector with two-color characteristics with photoresponse peaks at ∼6μm and 17μm was reported.
Journal ArticleDOI
Quantum dots-in-a-well infrared photodetectors
TL;DR: In this article, the InAs/InGaAs quantum dots-in-a-well (DWELL) infrared photodetectors are reviewed and some solutions for mitigating the low quantum efficiency are suggested at the end of this paper.
Journal ArticleDOI
High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity
Subhananda Chakrabarti,Adrienne D. Stiff-Roberts,P. K. Bhattacharya,Sarath D. Gunapala,Sumith V. Bandara,Sir B. Rafol,S. W. Kennerly +6 more
TL;DR: In this article, the growth of multiple self-organized InAs quantum dots separated by GaAs barrier layers was optimized to enhance the absorption of quantum-dot infrared photodetectors (QDIPs).
Journal ArticleDOI
Quantum-Dot Infrared Photodetectors
Joe C. Campbell,Anupam Madhukar +1 more
TL;DR: A study of a series of n-i-n InAs quantum-dot infrared photodetectors (QDIPs) with unintentionally doped active regions with potential for multicolor operation.
References
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Journal ArticleDOI
Quantum‐well infrared photodetectors
TL;DR: The literature on quantum-well infrared photodetectors (QWIPs) is reviewed in this paper, where a detailed discussion is given on the device physics of the intersubband absorption and hot-carrier transport processes for individual detectors, as well as the high performance which has been achieved for large staring arrays.
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Inas/gaas pyramidal quantum dots: strain distribution, optical phonons, and electronic structure
TL;DR: In this paper, the strain distribution in and around pyramidal InAs/GaAs quantum dots (QD's) on a thin wetting layer fabricated recently with molecular-beam epitaxy, is simulated numerically.
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The theory of quantum-dot infrared phototransistors
TL;DR: In this paper, a quantum-dot infrared phototransistor (QDIP) was proposed and considered theoretically, which utilizes intersubband electron transitions from the bound states.
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Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
Hongtao Jiang,Jasprit Singh +1 more
TL;DR: In this paper, the authors examined the strain tensor in pyramidal-shaped quantum dot structures using a valence force field model and found the electronic spectra in highly strained dot.
Journal ArticleDOI
Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
TL;DR: In this article, the infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate, and the electronic level structure was determined, based on polarization, bias, and temperature dependence of the transitions.