scispace - formally typeset
Journal ArticleDOI

InGaAs/InP multiple quantum well waveguide phase modulator

Uziel Koren, +3 more
- 16 Feb 1987 - 
- Vol. 50, Iss: 7, pp 368-370
Reads0
Chats0
TLDR
In this article, a double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52 μm wavelength.
Abstract
A double heterostructure ridge waveguide with multiple quantum well InGaAs/InP core and InP cladding layers has been operated as a phase modulator at 1.52 μm wavelength. The observed phase shift coefficient was 12°/V mm. With a 1‐mm‐long device we have achieved a half wavelength shift at 15 V bias and a maximum phase shift of 420° at 35 V. Quantum confined Stark effect has been observed in the shorter 1.49–1.52 μm wavelength region. The ability to obtain λ/2 modulation with a short device and relatively low voltage makes this device very attractive for practical applications.

read more

Citations
More filters
Journal ArticleDOI

Linear and nonlinear optical properties of semiconductor quantum wells

TL;DR: In this paper, the experimental and theoretical investigations of the linear and nonlinear optical properties of semiconductor quantum well structures, including the effects of electrostatic fields, extrinsic carriers and real or virtual photocarriers, are reviewed.
Journal ArticleDOI

III-V compound SC for optoelectronic devices

TL;DR: In this article, the important device applications of various III-V compound semiconductors are reviewed for optical fiber communications, infrared and visible LEDs/LDs and high efficiency solar cells.
Journal ArticleDOI

Analysis of depletion edge translation lightwave modulators

TL;DR: In this paper, a complete analysis of waveguide phase modulators based on the depletion-edge-translation concept is presented, where the phenomena taking place inside the depletion region which contribute to changing the refractive index there are studied.
Journal ArticleDOI

Quaternary quantum wells for electro‐optic intensity and phase modulation at 1.3 and 1.55 μm

TL;DR: In this paper, the authors demonstrate that large quantum-confined Stark effect can be obtained in high quality InGaAsP/InP quantum well p−i−n heterostructures.
Journal ArticleDOI

Low‐loss InGaAs/InP multiple quantum well optical electroabsorption waveguide modulator

TL;DR: In this paper, an optical electroabsorption waveguide modulator based on the quantum constrained Stark effect in an InGaAs/InP multiple quantum well waveguide was described.
References
More filters
Journal ArticleDOI

Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

TL;DR: In this article, the authors present theory and extended experimental results for the large shift in optical absorption in GaAs-AlGaAs quantum well structures with electric field perpendicular to the layers.
Journal ArticleDOI

Nature of wavelength chirping in directly modulated semiconductor lasers

TL;DR: In this paper, the inherent connection between frequency deviations and the optical power wave-form of a directly modulated semiconductor laser was derived, providing for the first time a quantitative assessment of inherent optical fiber dispersion penalties.
Journal ArticleDOI

Extremely high quality Ga0.47In0.53As/InP quantum wells grown by chemical beam epitaxy

TL;DR: In this article, the photoluminescence (PL) linewidths at 2 K were the narrowest that have been ever reported for Ga0.47In0.53As quantum wells grown by any technique.
Journal ArticleDOI

Strong polarization-sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides

TL;DR: In this paper, the first measurements of perpendicular field electroabsorption (quantum confined Stark effect) in GaAs/AlGaAs quantum wells for light propagating parallel to the plane of the layers were reported.
Journal ArticleDOI

100 ps waveguide multiple quantum well (MQW) optical modulator with 10:1 on/off ratio

TL;DR: By incorporating two quantum wells into a capillary waveguide, the first MQW optical modulator with an on/off ratio of at least 10:1 was presented in this paper.
Related Papers (5)