Patent
Integrated circuit capacitor
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TLDR
The use of different materials for different conductive films forming plates or electrodes of one or more capacitors formed in a trench in a body of semiconductor materials allow connections to be made selectively to the plates.Abstract:
Use of different materials for different conductive films forming plates or electrodes of one or more capacitors formed in a trench in a body of semiconductor materials allow connections to be made selectively to the plates. The films may be undercut by different etchants at respective connection apertures to avoid formation of connections or connections made by doped polysilicon of different conductivities forming connections to some plates of similarly doped polysilicon and blocking diode junctions with oppositely doped polysilicon. The blocking diodes may include a compensation implant to adjust reverse breakdown characteristics and provide transient and electrostatic discharge protection.read more
Citations
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References
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Patent
Capacitor structure for an integrated circuit
Anthony C. C. Ng,Mukul Saran +1 more
TL;DR: In this paper, the capacitance is defined by layers forming interconnect metallization and interlayer dielectrics, which are relatively thick and provide high breakdown voltages, and are used for high voltage (>100 V), low leakage and high frequency (MHz/GHz) applications.
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A conductive amorphous-nitride barrier layer for high dielectric-constant material electrodes
TL;DR: In this paper, the authors proposed an exotic-nitride barrier layer, which substantially inhibits diffusion of oxygen to the oxidizable layer, thus minimizing deleterious oxidation of the oxide layer.
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Tasin oxygen diffusion barrier in multilayer structures
Paul D. Agnello,Cyril Cabral,Alfred Grill,Christopher V. Jahnes,Thomas John Licata,Ronnen Andrew Roy +5 more
TL;DR: A multilayer structure having an oxygen or dopant diffusion barrier fabricated of an electrically conductive, thermally stable material of refractory metal-silicon-nitrogen which is resistant to oxidation, prevents out-diffusion of dopants from silicon and has a wide process window wherein the refractive metal is selected from Ta, W, Nb, V, Ti, Zr, Hf, Cr and Mo as mentioned in this paper.
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