Patent
Atomic layer deposition and conversion
TLDR
A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described in this article, where a metal atomic layer is oxidized to form a metal oxide layer.Abstract:
A method for growing films for use in integrated circuits using atomic layer deposition and a subsequent converting step is described. In an embodiment, the subsequent converting step includes oxidizing a metal atomic layer to form a metal oxide layer. The atomic layer deposition and oxidation step are then repeated to produce a metal oxide layer having sufficient thickness for use as a metal oxide layer in an integrated circuit. The subsequent converting step, in an embodiment, includes converting the atomic deposition layer by exposing it to one of nitrogen to form a nitride layer, carbon to form a carbide layer, boron to form a boride layer, and fluorine to form a fluoride layer. Systems and devices for performing the method, semiconductor devices so produced, and machine readable media containing the method are also described.read more
Citations
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TL;DR: In this article, the dielectric can be formed as a nanolaminate of hafnium oxide and a lanthanide oxide, where the layer of the hafium oxide is adjacent and in contact with the surface of the lanthanides.
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Process feed management for semiconductor substrate processing
Fred Pettinger,Carl White,Dave Marquardt,Sokol Ibrani,Eric Shero,Todd Dunn,Kyle Fondurulia,Mike Halpin +7 more
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References
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
The work function of the elements and its periodicity
TL;DR: In the data for the 63 elements, trends that occur simultaneously in both the columns and the rows of the periodic table are shown to be useful in predicting correct values and also for identifying questionable data.
Book
The Materials Science of Thin Films
TL;DR: A review of materials science can be found in this paper, where the authors describe the properties of thin-film materials and their applications in the following categories: electrical and magnetic properties, optical properties, and material properties.
Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
Patent
Transistor structures and methods for making the same
John F. Wager,Randy Hoffman +1 more
TL;DR: In this paper, the field effect transistors (FET) have been extended to include a gate insulator layer comprising a substantially transparent material adjacent to the channel layer so as to define a channel layer/gate insulator interface.