Patent
Integrated edge structure for high voltage semiconductor devices and related manufacturing process
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TLDR
In this paper, an integrated edge structure for a high voltage semiconductor device comprising a PN junction represented by a diffused region of a first conductivity type extending from a semiconductor top surface is described.Abstract:
An integrated edge structure for a high voltage semiconductor device comprising a PN junction represented by a diffused region of a first conductivity type extending from a semiconductor device top surface is described. The edge structure comprises a first, lightly doped ring of the first conductivity type obtained in a first, lightly doped epitaxial layer of a second conductivity type and surrounding said diffused region, and a second, lightly doped ring of the first conductivity type, comprising at least one portion superimposed on and merged with said first ring, obtained in a second, lightly doped epitaxial layer of the second conductivity type grown over the first epitaxial layer.read more
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Method of manufacturing an integrated edge structure for high voltage semiconductor devices, and related integrated edge structure
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Fluid flow regulator
TL;DR: In this article, a pressure regulator is used to supply fluid at a substantially constant pressure to a point of demand, from a relatively higher pressure source of interest, such as a high-pressure source.
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