Journal ArticleDOI
Review of SiC crystal growth technology
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This article is published in Semiconductor Science and Technology.The article was published on 2018-09-05. It has received 67 citations till now. The article focuses on the topics: Crystal growth.read more
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Multi-component ZnO alloys: Bandgap engineering, hetero-structures, and optoelectronic devices
TL;DR: In this paper , the authors summarized recent advances in the experimental and theoretical studies on bandgap engineering of ZnO by formation of multi-component alloys, and the development of related hetero-structures and optoelectronic devices.
Journal ArticleDOI
Ultrawide-bandgap semiconductor AlN crystals: growth and applications
Ruixian Yu,Liu Guangxia,Liu Guangxia,Guodong Wang,Chengmin Chen,Mingsheng Xu,Hong Zhou,Tailin Wang,Jiaoxian Yu,Gang Zhao,Lei Zhang +10 more
TL;DR: In this article, the authors summarized the latest research progress in aluminum nitride (AlN) crystals grown by the physical vapor transport (PVT) method in recent years, and introduced their applications in deep UV-LEDs, UV lasers and Schottky barrier diodes (SBDs).
Journal ArticleDOI
Review of Silicon Carbide Processing for Power MOSFET
Catherine Langpoklakpam,An Chen Liu,Kuo-Hsiung Chu,Lung Hsing Hsu,Wen-Chung Lee,Shih Chen Chen,Chia-Wei Sun,Min-Hsiung Shih,Kunghong Lee,Hao-Chung Kuo +9 more
TL;DR: A general review of the critical processing steps for manufacturing silicon carbide (SiC) MOSFETs and power applications based on SiC power devices are covered in this article . But, the reliability issues of SiC MOS FETs are also briefly summarized.
Journal ArticleDOI
New Approaches and Understandings in the Growth of Cubic Silicon Carbide
Francesco La Via,Massimo Zimbone,Corrado Bongiorno,Antonino La Magna,Giuseppe Fisicaro,Ioannis Deretzis,Viviana Scuderi,Cristiano Calabretta,Filippo Giannazzo,Marcin Zielinski,Ruggero Anzalone,Marco Mauceri,Danilo Crippa,Emilio Scalise,Anna Marzegalli,Andrey Sarikov,Leo Miglio,Valdas Jokubavicius,Mikael Syväjärvi,Rositsa Yakimova,Philipp Schuh,Michael Schöler,Manuel Kollmuss,Peter J. Wellmann +23 more
TL;DR: In this paper, several new approaches about the 3C-SiC growth are presented, and a new understanding of the material defects has been obtained, as well as regarding all the interactions between defects and several growth parameters.
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Geometrical design of a crystal growth system guided by a machine learning algorithm
Wancheng Yu,Can Zhu,Yosuke Tsunooka,Wei Huang,Yifan Dang,Kentaro Kutsukake,Shunta Harada,Miho Tagawa,Toru Ujihara,Toru Ujihara +9 more
TL;DR: It was found that the combination of machine learning with a genetic algorithm could generate various possible solutions through a global search at a relatively high speed, which lie outside the solution range of the experimental optimization methods that are currently used.
References
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Book
Properties of advanced semiconductor materials : GaN, AlN, InN, BN, SiC, SiGe
TL;DR: The Brillouin Zone for Wurtzite Crystal is defined in this paper, as the first zone for Zinc Blende Crystal, which is a type of hexagonal crystal.
Book
Thermodynamic properties of individual substances
TL;DR: In this paper, the authors present a list of elements and their compounds: O, HD, T, F, Cl, Br, I, He, Ne, Ar, Kr, Xe, Rn, S, N, P, and their corresponding compounds.
Journal ArticleDOI
Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices
TL;DR: In this article, a reproducible process for growing a thick single-crystal layer of cubic SiC on a singlecrystal Si wafer by chemical vapor deposition is described, where a buffer layer, grown in situ, is used between the SiC and the Si substrate to minimize the effect of lattice mismatch.
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A revolution in lighting
TL;DR: Key materials discoveries have prompted the rise of inorganic light-emitting diodes in the lighting industry and remaining challenges are being addressed to further extend the impact of this technology in lighting, displays and other applications.
Journal ArticleDOI
Material science and device physics in SiC technology for high-voltage power devices
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.