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Patent

Liquid crystal display device and electronic device

Hajime Kimura
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TLDR
In this paper, a liquid crystal display is controlled by an electric field between the first electrode and the second electrode, and the liquid crystal is generated by the voltage between the two electrodes.
Abstract
To provide a semiconductor device, a liquid crystal display device, and an electronic device which have a wide viewing angle and in which the number of manufacturing steps, the number of masks, and manufacturing cost are reduced compared with a conventional one. The liquid crystal display device includes a first electrode formed over an entire surface of one side of a substrate; a first insulating film formed over the first electrode; a thin film transistor formed over the first insulating film; a second insulating film formed over the thin film transistor; a second electrode formed over the second insulating film and having a plurality of openings; and a liquid crystal over the second electrode. The liquid crystal is controlled by an electric field between the first electrode and the second electrode.

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Citations
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References
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Amorphous oxide and thin film transistor

TL;DR: In this paper, an amorphous oxide and a thin-film transistor were constructed using an electron carrier concentration less than 10 18 /cm 3, where the electron carrier was obtained by using a gate electrode and gate insulating film.
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Liquid crystal display device and fabricating method thereof

TL;DR: In this paper, a method for fabricating a liquid crystal display (LCD) device comprises forming an active pattern and a data line on a substrate, the active pattern including a source, a drain, and a channel regions.
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Liquid crystal device and electronic equipment

TL;DR: In this paper, a conductive light shielding film provided on the side of an opposed substrate as a common electrode was used to drive a liquid crystal layer by pixel electrodes of an array substrate and the light shield film of the opposed substrate.
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Manufacture of semiconductor device

TL;DR: In this paper, a polysilicon layer 48 is implanted with high concn. P ions at a low implanting energy and with low concn P ion at a high implanted energy, and the masking step for forming a part of a dielectric film of the capacitor C contacting the lower electrode is omitted.
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Semiconductor device and manufacturing method thereof

TL;DR: In this paper, the authors proposed a method to reduce the stress generated in the inside of a semiconductor device, with respect to the semiconductor devices and the manufacturing method thereof, wherein the improvement of the heat radiating efficiency of the generated heat generated from a silicon chip is intended.