Patent
Thin film transistor array panel and manufacturing method thereof
TLDR
In this paper, a method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate, forming an gate insulating layer, forming a semiconductor layer, and forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion larger than the second portion.Abstract:
A method of manufacturing a thin film transistor array panel is provided, the method includes: forming a gate line on an insulating substrate; forming a gate insulating layer; forming a semiconductor layer; forming a data conductive layer including a data line and a drain electrode; depositing a passivation layer; forming a photoresist including a first portion located on an end portion of the gate line, a second portion thicker than the first portion and located on the drain electrode, and a third portion thicker than the second portion; exposing a portion of the passivation layer under the second portion of the photoresist and a portion of the gate insulating layer under the first portion of the photoresist by etching using the photoresist as an etch mask; forming first and second contact holes exposing the drain electrode and the end portions of the gate line, respectively; and forming a pixel electrode connected to the drain electrode through the first contact hole.read more
Citations
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TL;DR: In this article, a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate is presented, which includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductor oxide film pattern and data wiring are stacked on the gate wiring.
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References
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Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
Field-effect transistor
TL;DR: In this paper, a field-effect transistor with an active layer and a gate insulating film is presented, where the active layer includes an amorphous oxide layer and the gate insulator.
Patent
Amorphous oxide and thin film transistor
TL;DR: In this paper, an amorphous oxide and a thin-film transistor were constructed using an electron carrier concentration less than 10 18 /cm 3, where the electron carrier was obtained by using a gate electrode and gate insulating film.
Patent
Amorphous oxide and field effect transistor
TL;DR: In this article, a novel amorphous oxide applicable to an active layer of a TFT is provided, which consists of microcrystals and can be applied to any TFT.
Patent
Indium oxide-based thin film transistors and circuits
TL;DR: In this paper, thin-film transistors and circuits with indium oxide-based channel layers are presented for the fabrication of flexible and transparent substrates for electronic display and imaging applications.