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Lithography mask blank and method of manufacturing the same

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TLDR
In this article, a laser beam is irradiated onto a workpiece to only heat the light absorption film without any temperature rise of the substrate and to anneal an internal stress of the light absorbing film.
Abstract
In a method of annealing a workpiece which has a substrate and a light absorption film on the substrate, a laser beam is irradiated onto a workpiece to only heat the light absorption film without any temperature rise of the substrate and to anneal an internal stress of the light absorption film. A wavelength of the laser beam is selected so as to be absorbed into the light absorption film. The workpiece may be a photo mask blank (or a photo mask) or a phase shift mask blank (or a phase shift mask).

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Photomask blank and photomask

TL;DR: In this article, a photomask blank is provided comprising an etch stop film which is disposed on a transparent substrate and is resistant to fluorine dry etching and removable by chlorine dry etch.
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TL;DR: In this paper, a hard mask film made of a chromium-containing material including tin can cause a significant increase in the etching rate at the time of chlorine-containing dry etching.
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TL;DR: In this paper, a flatness of a substrate is determined to achieve a desired flatness by predicting the variation in flatness resulting from a film stress of a thin film formed on the substrate.
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Methods of manufacturing photomask blank and photomask

TL;DR: A photomask blank having a film of at least one layer formed on a substrate is manufactured by forming a film on the substrate and irradiating the film with light from a flash lamp as discussed by the authors.
References
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Patent

Production of mask for exposure and apparatus for production therefor

TL;DR: In this paper, a SiN phase shift film is formed on a transparent substrate made of quartz and then the reforming and stabilizing treatment of the phase shift mask is executed by oxidizing the mask in an ozone atmosphere without exposure of the mask to the atm. and further, uniformly irradiating the film with far UV rays by a low-pressure mercury lamp, by which the optical constant of the Phase Shift film 502 is adjusted to a desired phase difference and transmittance in the process for producing the mask for exposure.
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Method of manufacturing phase shift mask blank and phase shift mask

TL;DR: In this paper, the phase shift mask blank of halftone type with the semi-transparent film formed on a transparent substrate is presented. And the thermal process for the semi transparent film is carried out at a temp of not lower than 150 degC.
Patent

Multi-layered attenuated phase shift mask and a method for making the mask

TL;DR: The attenuated phase shift mask as mentioned in this paper has a thickness between about 500 angstroms and 2000 angstrom's with the ratio of the thickness of the Si x N y to the group IV, V or VI transitional metal nitride being about 85 to 15.
Patent

Blanks for halftone phase shift photomasks, halftone phase shift photomasks, and methods for fabricating them

TL;DR: In this article, a halftone phase shift photomask and a blank were proposed to enable the transmittance of a phase shift portion to be varied even after blank or photOMask fabrication, which can accommodate to a variety of patterns and can be fabricated on a mass scale.
Patent

Exposure mask and manufacturing method and device therefor

TL;DR: In this paper, the authors proposed an exposure half-tone type phase shift mask capable of preventing the fluctuation of the physical properties of a translucent film due to the irradiation of exposure light, and contributing to the improvement of pattern transfer accuracy.