Patent
Lithography mask blank and method of manufacturing the same
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TLDR
In this article, a laser beam is irradiated onto a workpiece to only heat the light absorption film without any temperature rise of the substrate and to anneal an internal stress of the light absorbing film.Abstract:
In a method of annealing a workpiece which has a substrate and a light absorption film on the substrate, a laser beam is irradiated onto a workpiece to only heat the light absorption film without any temperature rise of the substrate and to anneal an internal stress of the light absorption film. A wavelength of the laser beam is selected so as to be absorbed into the light absorption film. The workpiece may be a photo mask blank (or a photo mask) or a phase shift mask blank (or a phase shift mask).read more
Citations
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Photomask blank and photomask
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References
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Patent
Production of mask for exposure and apparatus for production therefor
TL;DR: In this paper, a SiN phase shift film is formed on a transparent substrate made of quartz and then the reforming and stabilizing treatment of the phase shift mask is executed by oxidizing the mask in an ozone atmosphere without exposure of the mask to the atm. and further, uniformly irradiating the film with far UV rays by a low-pressure mercury lamp, by which the optical constant of the Phase Shift film 502 is adjusted to a desired phase difference and transmittance in the process for producing the mask for exposure.
Patent
Method of manufacturing phase shift mask blank and phase shift mask
TL;DR: In this paper, the phase shift mask blank of halftone type with the semi-transparent film formed on a transparent substrate is presented. And the thermal process for the semi transparent film is carried out at a temp of not lower than 150 degC.
Patent
Multi-layered attenuated phase shift mask and a method for making the mask
TL;DR: The attenuated phase shift mask as mentioned in this paper has a thickness between about 500 angstroms and 2000 angstrom's with the ratio of the thickness of the Si x N y to the group IV, V or VI transitional metal nitride being about 85 to 15.
Patent
Blanks for halftone phase shift photomasks, halftone phase shift photomasks, and methods for fabricating them
Keiji Hashimoto,Junji Fujikawa,Hiroshi Mohri,Masahiro Takahashi,Hiroyuki Miyashita,Yukio Iimura +5 more
TL;DR: In this article, a halftone phase shift photomask and a blank were proposed to enable the transmittance of a phase shift portion to be varied even after blank or photOMask fabrication, which can accommodate to a variety of patterns and can be fabricated on a mass scale.
Patent
Exposure mask and manufacturing method and device therefor
TL;DR: In this paper, the authors proposed an exposure half-tone type phase shift mask capable of preventing the fluctuation of the physical properties of a translucent film due to the irradiation of exposure light, and contributing to the improvement of pattern transfer accuracy.
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