Open AccessProceedings Article
Low cost thin film chalcopyrite solar cells
Vijay K. Kapur,Bulent M. Basol,Eric S. Tseng +2 more
- pp 1429-1432
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This article is published in Photovoltaic Specialists Conference.The article was published on 1985-01-01 and is currently open access. It has received 18 citations till now. The article focuses on the topics: Thin film & Energy conversion efficiency.read more
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Patent
Group I-III-VI2 semiconductor films for solar cell application
Bulent M. Basol,Vijay K. Kapur +1 more
TL;DR: In this article, an improved thin film solar cell with excellent electrical and mechanical integrity was proposed, which consisted of a substrate, a Group I-III-VI 2 semiconductor absorber layer and a transparent window layer.
Patent
Technique and apparatus for depositing layers of semiconductors for solar cell and module fabrication
TL;DR: In this paper, a low-cost deposition technique to form high-quality, dense, well-adhering Group IBIIIAVIA compound thin films with macro-scale as well as micro-scale compositional uniformities is described.
Patent
Technique and apparatus for depositing thin layers of semiconductors for solar cell fabrication
TL;DR: In this article, a method of growing a Group IBIIIAVIA semiconductor layer on a base is described, which includes the steps of depositing on the base a film of Group IB material and at least one layer of Group IIIA material, intermixing the film of group IB material, and forming over the intermixed layer a metallic film comprising at least 1 group IIIA sublayer and a Group IB sub-layer.
Journal ArticleDOI
Deposition of CuInSe/sub 2/ films by a two-stage process utilizing E-beam evaporation
B.M. Basol,V.K. Kapur +1 more
TL;DR: In this article, the electron-beam evaporation method was used to first deposite Cu and In metallic layers onto a substrate, and then selenizing these layers in an H/sub 2/Se atmosphere.
Patent
Efficient gallium thin film electroplating methods and chemistries
TL;DR: In this paper, a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor.