Journal ArticleDOI
Low Energy Focused Ion Beam System and Application to Low Damage Microprocess
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In this paper, a low energy focused ion beam (FIB) system was developed by employing retarding field optics, which is equipped with a gas jet and is used for ion beam assisted etching or deposition.Abstract:
We have developed a low energy focused ion beam (FIB) system by employing retarding field optics. The system is equipped with a gas jet and is used for ion beam assisted etching or deposition. To evaluate the usefulness of low energy FIB, we have been investigating defects in GaAs induced by irradiation of low energy Ga+ FIB and Ar+ unfocused beams. Defets induced by irradiation at 300 K were observed even at a depth of >2000 ?, which is much deeper than the ion range. However, it was observed that the deep distribution was suppressed by irradiation at low temperature (100 K.read more
Citations
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In situ processing of semiconductors
TL;DR: In this article, a review of in- situ processing methods with particular emphasis on combinations of fine-scale patterning and crystal growth in the III-V materials is presented, with a focus on the combination of fine scale patterning with crystal growth.
Journal ArticleDOI
Sub-100 nm Patterning of GaAs Using In Situ Electron Beam Lithography
TL;DR: In this paper, an ultrathin oxide mask was used for patterning of GaAs at sub-100 nm size using in situ electron beam (EB) lithography processes, where the size of the etched feature is as small as 50 nm, which is equal to the diameter of the electron beam.
Journal ArticleDOI
In situ patterning and overgrowth for the formation of buried GaAs/AlGaAs single quantum‐well structures
TL;DR: In this article, a GaAs oxide layer was used as the etching mask, which was selectively formed on a clean GaAs surface by EB irradiation under an O2 ambient.
Journal ArticleDOI
New damage-free patterning method of a GaAs oxide mask and GaAs selective growth using the metalorganic molecular beam epitaxy method
Seikoh Yoshida,Masahiro Sasaki +1 more
TL;DR: In this article, a new damage-free patterning method of a GaAs oxide mask for the selective area growth of GaAs was developed for the first time, where GaAs were selectively grown there by metalorganic molecular beam epitaxy (MOMBE) and no residual oxygen was observed by secondary ion mass spectrometry (SIMS) at the interface between the GaAs selectively grown layer and the substrate.
Journal ArticleDOI
Role of an electron beam in the modification of a GaAs oxide mask for in situ EB lithography
TL;DR: The electron beam-induced modification of GaAs oxide for the in situ lithography process has been investigated in this article, where the oxide formed on an as-grown GaAs surface is irradiated with an electron beam at doses in the range of 1.5×1017 to 4×1019 electrons/cm2 at beam energies of 10-25 keV.
References
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Journal ArticleDOI
Focused ion beam induced deposition of gold
TL;DR: A finely focused ion beam is scanned over a surface on which a local gas ambient of dimethyl gold hexafluoro acetylacetonate is created by a directed miniature nozzle.
Journal ArticleDOI
Ion Beam Assisted Deposition of Metal Organic Films Using Focused Ion Beams
TL;DR: In this article, 80 nm thick films were deposited at a dose of 1×1016/cm2 and the film composition and its depth dependence was measured by Auger electron spectroscopy.