Patent
Low temperature silicon compound deposition
Ruben Haverkort,Yuet Mei Wan,Marinus Josephus De Blank,Cornelius A. van der Jeugd,Jacobus Johannes Beulens,Michael A. Todd,Keith Doran Weeks,Christian J. Werkhoven,Christophe F. Pomarede +8 more
TLDR
In this paper, a batch reaction chamber is used to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures, under reaction rate limited conditions, using trisilane as the silicon precursor.Abstract:
Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. Trisilane flow is interrupted. A silicon nitride layer is then formed by nitriding the silicon layer with nitrogen radicals, such as by pulsing the plasma power (remote or in situ) on after a trisilane step. The nitrogen radical supply is stopped. Optionally non-activated ammonia is also supplied, continuously or intermittently. If desired, the process is repeated for greater thickness, purging the reactor after each trisilane and silicon compounding step to avoid gas phase reactions, with each cycle producing about 5-7 angstroms of silicon nitride.read more
Citations
More filters
Patent
Film formation method and apparatus for semiconductor process
TL;DR: In this article, a process gas supply system for a semiconductor process includes a gas mixture tank configured to mix first and third process gases to form a mixture gas, a mixture gaseous supply line configured to supply the mixture gas from the gas mixtures tank to a process field, and a second process gas circuit having a second gas supply circuit without passing through the gas mixture gas supply line.
Patent
Plasma activated conformal dielectric film deposition
Shankar Swaminathan,Jon Henri,Dennis M. Hausmann,Pramod Subramonium,Mandyam Sriram,Vishwanathan Rangarajan,Kirthi K. Kattige,Bart van Schravendijk,Andrew John McKerrow +8 more
TL;DR: In this article, the dopant species is delivered to the film between the cycles of adsorption and reaction in a surface-mediated reaction, where a film is grown over one or more cycles of reaction.
Patent
Method of manufacturing semiconductor device and substrate processing apparatus
TL;DR: In this article, a film is formed on a substrate by performing a cycle at least twice, the cycle including a nucleus formation process for forming nuclei on the substrate and a nucleus growth suppression process for suppressing growth of the nuclei.
Patent
High quality silicon oxide films by remote plasma cvd from disilane precursors
TL;DR: In this paper, a method of depositing a silicon and nitrogen containing film on a substrate was proposed, where the radical nitrogen and silicon-containing precursors react and deposit the silicon-and nitrogen-containing film on the substrate.
Patent
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
TL;DR: In this paper, a method of manufacturing a semiconductor device includes forming a thin film containing a specific element, oxygen, carbon, and nitrogen by performing a cycle a predetermined number of times.
References
More filters
Patent
Surface preparation prior to deposition
TL;DR: In this article, the surface termination of the substrate with a low temperature radical treatment is used to facilitate subsequent deposition without depositing a layer of any appreciable thickness and without significantly affecting the bulk properties of the underlying material.
Patent
Fabrication method for a thin film semiconductor device, the thin film semiconductor device itself, liquid crystal display, and electronic device
TL;DR: In this paper, a high performance thin-film semiconductor device using a low temperature process in which it is possible to use low price glass substrates has been fabricated by forming a silicon film at less than 450° C, and, after crystallization, keeping the maximum processing temperature at or below 350° C.
Patent
Cycling deposition of low temperature films in a cold wall single wafer process chamber
TL;DR: In this article, a method for film deposition that includes, flowing a reactive gas over a top surface of a wafer in a cold wall single wafer process chamber to form a first half-layer of the film on the wafer, stopping the flow of the first reactive gas, removing residual second reactive gas from the cold wall, and controlling a thickness of the second halflayer by regulating process parameters within the cold-walled single-wafer process chambers.
Patent
Method to form ultra high quality silicon-containing compound layers
TL;DR: In this article, multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers, using trisilane as the silicon precursor.
Patent
In situ method for cleaning silicon surface and forming layer thereon in same chamber
TL;DR: In this article, a method is described for cleaning a silicon surface of a semiconductor wafer in a vacuum chamber while radiantly heating said silicon surface to maintain it within a first temperature range in the presence of hydrogen gas; then quickly cooling the wafer down to a second temperature range by reducing the radiant heat.