Journal ArticleDOI
Low threshold current density operation of GaInAsP-InP laser with multiple reflector microcavities
Ki-Chul Shin,Munehisa Tamura,A. Kasukawa,N. Serizawa,S. Kurihashi,Shigeo Tamura,Shigehisa Arai +6 more
TLDR
In this article, a very uniform multiple reflector microcavity structure was fabricated by electron beam (EB) lithography and selective wet chemical etching for low threshold current operation.Abstract:
We propose and demonstrate a new type of semiconductor laser having multiple reflector microcavities for the purpose of low threshold current operation. Very uniform multiple reflector microcavity structure was fabricated by electron beam (EB) lithography and selective wet chemical etching. Due to multiple reflection effect, threshold current density as low as 310 A/cm/sup 2/ (threshold current of 30 mA) was obtained at room temperature with the total cavity length of 64 /spl mu/m and the cavity width of 200 /spl mu/m. >read more
Citations
More filters
Journal ArticleDOI
Edge-emitting lasers with short-period semiconductor/air distributed Bragg reflector mirrors
TL;DR: In this paper, a short-cavity edge-emitting 0.98/spl mu/m GaAs-based laser with semiconductor/air distributed Bragg reflector (DBR) mirrors made by reactive ion etching (RIE) was demonstrated.
Journal ArticleDOI
Edge-emitting GaInAs-AlGaAs microlasers
TL;DR: In this paper, the fabrication and characteristics of edge-emitting microlasers with deeply etched distributed Bragg reflector (DBR) mirrors are presented using reactive ion etching, the mirrors are formed at both cavity ends of a ridge waveguide laser with an GaInAs-AlGaAs single-quantum well active layer.
Journal ArticleDOI
Short-cavity edge-emitting lasers with deeply etched distributed Bragg mirrors
TL;DR: In this article, a short-cavity edge-emitting laser with deeply etched distributed Bragg reflectors (DBRs) of third and second order was realized by reactive ion etching on GaInAs/AlGaAs layer structures.
Journal ArticleDOI
1.3 [micro sign]m GaInAsP lasers integrated with butt-coupled waveguide and high reflective semiconductor/air Bragg reflector (SABAR)
TL;DR: In this article, a novel integrated laser with a butt-coupled waveguide and a semiconductor/air Bragg reflector (SABAR) is presented, where the SABAR is loaded into the waveguide to reduce the diffraction loss.
Wet Chemical Etching for Ultrafine Periodic Structure : Rectangular InP Corrugations of 70 nm Pitch and 100 nm Depth : Etching and Deposition Technology
TL;DR: In this paper, rectangular corrugations of 70 nm pitch and 100 nm depth were formed on InP using electron beam lithography and two-step wet chemical etching.
References
More filters
Journal ArticleDOI
Electromagnetic propagation in periodic stratified media. I. General theory
TL;DR: In this article, a diagonalization of the unit cell translation operator is used to obtain exact solutions for the Bloch waves, the dispersion relations, and the band structure of the medium.
Journal ArticleDOI
Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure
Yusuke Hayashi,T. Mukaihara,Nobuaki Hatori,N. Ohnoki,Akihiro Matsutani,Fumio Koyama,Kenichi Iga +6 more
TL;DR: In this article, an index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated.
Journal ArticleDOI
InGaAs/InP quantum well lasers with sub-mA threshold current
TL;DR: In this article, the effect of high-reflectivity facet coatings on the threshold current of lattice matched and compressively strained InGaAs/InP quantum well lasers was evaluated.
Journal ArticleDOI
High efficiency and low threshold current strained V‐groove quantum‐wire lasers
Sandip Tiwari,G. David Pettit,Keith R. Milkove,Francoise K. LeGoues,R. J. Davis,Jerry M. Woodall +5 more
TL;DR: In this article, a Ga1−xInxAs/Ga 1−xAlxAs semiconductor material system with a minimum threshold current of 188 μA and maximum powers of 50 μW in continuous multimode operation at wavelengths of ≊980 nm and differential output of 0.5 μW/μA was reported.
Journal ArticleDOI
High‐speed digital modulation of ultralow threshold (<1 mA) GaAs single quantum well lasers without bias
TL;DR: In this paper, buried heterostructure GaAlAs with submilliampere threshold current fabricated from single quantum well wafers can be driven directly with logic level signals without any current bias.