scispace - formally typeset
N

Nobuaki Hatori

Researcher at Fujitsu

Publications -  97
Citations -  1725

Nobuaki Hatori is an academic researcher from Fujitsu. The author has contributed to research in topics: Laser & Silicon photonics. The author has an hindex of 21, co-authored 97 publications receiving 1661 citations. Previous affiliations of Nobuaki Hatori include Tokyo Institute of Technology & NEC.

Papers
More filters
Journal ArticleDOI

Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure

TL;DR: In this article, an index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated.
Journal ArticleDOI

Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs∕GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

TL;DR: In this article, the authors studied the injection current dependence of room-temperature lasing spectra of a 1.3-μm self-assembled InAs∕GaAs quantum-dot laser both experimentally and theoretically.
Journal ArticleDOI

A Hybrid Integrated Light Source on a Silicon Platform Using a Trident Spot-Size Converter

TL;DR: In this article, a hybrid integrated light source fabricated on a Si platform using a spot-size converter (SSC) with a trident Si waveguide was achieved with merely the simple planar form of a Si waveguarded with no use of complicated structures such as vertical tapers or an extra dielectric core overlaid on the waveguide.
Journal ArticleDOI

Polarization control of vertical-cavity surface emitting lasers using a birefringent metal/dielectric polarizer loaded on top distributed Bragg reflector

TL;DR: In this paper, a novel polarization control method using a birefringent metal/dielectric (semiconductor) polarizer has been proposed for the purpose of controlling the polarization state of vertical-cavity surface-emitting lasers (VCSEL's).
Journal ArticleDOI

Photon lifetime dependence of modulation efficiency and K factor in 1.3μm self-assembled InAs∕GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth

TL;DR: In this paper, the authors studied small-signal modulation characteristics of 1.3μm InAs∕GaAs self-assembled quantum-dot lasers in terms of the modulation efficiency and the K factor as a function of the photon lifetime.