Journal ArticleDOI
Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)As
M. L. Leadbeater,Laurence Eaves,P. E. Simmonds,G.A. Toombs,F.W. Sheard,P.A. Claxton,G. Hill,M.A. Pate +7 more
TLDR
In this article, the effect of the magnetic vector potential on the tunnelling electrons was investigated in a double barrier resonant tunnelling device with n-InP/(InGa)As.Abstract:
Negative differential conductivity (NDC) with a peak/valley ratio of 4.5:1 (4 K) and 2:1 (150 K) is observed in double barrier resonant tunnelling devices based on n-InP/(InGa)As. A transverse magnetic field applied in the plane of the tunnelling barriers ( J ¦ B ) significantly changes the current-voltage characteristics and eliminates the NDC for fields above −10 T. This behaviour is explained qualitatively in terms of the effect of the magnetic vector potential on the tunnelling electrons. The magneto-oscillations in the tunnelling current for J ‖ B are discussed in terms of a simple model of resonant tunnelling.read more
Citations
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Journal ArticleDOI
Investigations on resonant tunneling in III‐V heterostructures
TL;DR: In this article, a set of symmetric GaAs/AlGaAs double-barrier quantum well structures in which the thickness of the AlGaAs barriers has been systematically varied from 31 to 7.5 nm have been investigated.
Journal ArticleDOI
Tunnelling spectroscopy of low-dimensional states
TL;DR: In this article, a survey of tunnelling processes between barrier-separated two-dimensional (2D) systems and systems of different dimensionality is given, where all resonances have their origin in density of states effects, transmission coefficients or the overlap integrals between the initial and final states.
Journal ArticleDOI
Inter-Landau-level transitions of resonantly tunnelling electrons in tilted magnetic fields
TL;DR: In this article, the effect of a tilted magnetic field on the currentvoltage characteristics of an n-type double barrier resonant tunnelling device based on GaAs/(AlGa)As is investigated.
Journal ArticleDOI
Resonant tunnelling studies of magnetoelectric quantisation in wide quantum wells
M. L. Leadbeater,E. S. Alves,Laurence Eaves,Mohamed Henini,O.H. Hughes,A. Celeste,J. C. Portal,G. Hill,M. A. Pate +8 more
TL;DR: In this paper, the magnetic field applied in the plane of the tunnel barriers is investigated as a function of magnetic field in a double-barrier heterostructures with wide quantum wells.
Journal ArticleDOI
Hybrid magneto-electric states in resonant tunnelling structures
E. S. Alves,M. L. Leadbeater,Laurence Eaves,Mohamed Henini,O.H. Hughes,A. Celeste,J. C. Portal,G. Hill,M. A. Pate +8 more
TL;DR: In this article, double barrier resonant tunnelling structures with wide undoped quantum wells are used to study quantum ballistic transport in the presence of a magnetic field B. The structures are based on n−GaAs/(AlGa)As with well widths of 60 and 120 nm.
References
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Journal ArticleDOI
Tunneling in a finite superlattice
Raphael Tsu,Leo Esaki +1 more
TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
Journal ArticleDOI
Resonant tunneling through quantum wells at frequencies up to 2.5 THz
TL;DR: In this paper, a single quantum well of GaAs has been observed, and the current singularity and negative resistance region are dramatically improved over previous results, and detecting and mixing have been carried out at frequencies as high as 2.5 THz.
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Resonant magnetotunneling in GaAlAs-GaAs-GaAlAs heterostructures
TL;DR: A two-dimensional magnetotunneling effect which manifests itself as periodic structures in the current-voltage characteristics, with a period proportional to the electron cyclotron energy in the GaAs quantum well, from which the electron effective mass is determined.
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Excellent Negative Differential Resistance of InAlAs/InGaAs Resonant Tunneling Barrier Structures Grown by MBE
TL;DR: In this paper, light electron effective mass was found to be a very important parameter for improving the negative differential resistance (NDR) of a resonant tunneling barrier (RTB) structure.
Journal ArticleDOI
Magnetotransport in semiconductor superlattices
TL;DR: In this paper, the effect of a magnetic field on the currentvoltage characteristics of semiconductor tunnel barriers in which superlattices are used to filter the initial and final states is described.