Journal ArticleDOI
Resonant tunneling through quantum wells at frequencies up to 2.5 THz
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TLDR
In this paper, a single quantum well of GaAs has been observed, and the current singularity and negative resistance region are dramatically improved over previous results, and detecting and mixing have been carried out at frequencies as high as 2.5 THz.Abstract:
Resonant tunneling through a single quantum well of GaAs has been observed. The current singularity and negative resistance region are dramatically improved over previous results, and detecting and mixing have been carried out at frequencies as high as 2.5 THz. Resonant tunneling features are visible in the conductance‐voltage curve at room temperature and become quite pronounced in the I‐V curves at low temperature. The high‐frequency results, measured with far IR lasers, prove that the charge transport is faster than about 10−13 s. It may now be possible to construct practical nonlinear devices using quantum wells at millimeter and submillimeter wavelengths.read more
Citations
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Transport in Nanostructures
TL;DR: In this article, the authors introduce the concept of quantum confined systems and single electron phenomena in nanodevices, as well as interference in diffusive transport and temperature decay of fluctuations.
Book
Transport in nanostructures
TL;DR: In this paper, the authors introduce the concept of quantum confined systems and single electron phenomena in nanodevices and introduce interference in diffusive transport and non-equilibrium transport.
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Resonant tunneling through double barriers, perpendicular quantum transport phenomena in superlattices, and their device applications
TL;DR: In this article, a simple expression for the low field mobility in the miniband conduction regime is derived; localization effects, hopping conduction, and effective mass filtering are discussed.
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Room-temperature negative differential resistance in nanoscale molecular junctions
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Calculation of transmission tunneling current across arbitrary potential barriers
Yuji Ando,T. Itoh +1 more
TL;DR: In this paper, a multistep potential approximation method was proposed to calculate quantum mechanical transmission probability and current across arbitrary potential barriers by using the multi-stage potential approximation, which is applicable to various potential barriers and wells, including continuous variations of potential energy and electron effective mass.
References
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Journal ArticleDOI
Tunneling in a finite superlattice
Raphael Tsu,Leo Esaki +1 more
TL;DR: In this article, the transport properties of a finite superlattice from the tunneling point of view have been computed for the case of a limited number of spatial periods or a relatively short electron mean free path.
Journal ArticleDOI
Resonant tunneling in semiconductor double barriers
TL;DR: In this article, a double-barrier structure with a thin GaAs sandwiched between two GaAlas barriers has been shown to have resonance in the tunneling current at voltages near the quasistationary states of the potential well.
Journal ArticleDOI
Traversal Time for Tunneling
Markus Büttiker,Rolf Landauer +1 more
TL;DR: In this article, it was shown that at low modulation frequencies the traversing particle sees a static barrier and at high frequencies the particle tunnels through the time-averaged potential, but can do it inelastically, losing or gaining modulation quanta.
Journal ArticleDOI
Far‐ir heterodyne radiometric measurements with quasioptical Schottky diode mixers
TL;DR: In this article, the GaAs Schottky diode mixers were used to make heterodyne radiometric measurements with a corner reflector configuration over the spectral range 170 μm to 1 mm.
Journal ArticleDOI
ac electron tunneling at infrared frequencies: Thin‐film M‐O‐M diode structure with broad‐band characteristics
TL;DR: In this article, a high speed diode element consisting of a metal metaloxide metal electron tunneling junction is formed by thin films deposited on a substrate, which couple the junction to incident radiation.
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