Open AccessJournal Article
Materials for ultrahigh temperature structural applications
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TLDR
In this paper, advanced ultrahigh temperature materials are critical to the development of next-generation rocket engines and hypersonic spacecrafts, and the authors propose a method to obtain them from ultra high temperature materials.Abstract:
Advanced ultrahigh temperature materials are critical to the development of next-generation rocket engines and hypersonic spacecrafts.read more
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Preparation and some properties of nanocrystalline ZrB2 powders
TL;DR: In this article, Nanocrystalline ZrB2 has been prepared by the reaction of ZrCl4 with NaBH4 in the temperature range of 500-700 °C.
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Spark plasma sintering and hot pressing of ZrB2–SiCW ultra-high temperature ceramics
TL;DR: In this paper, Zirconium diboride (ZrB 2 )-based ultra-high temperature ceramics reinforced by SiC whisker were prepared by spark plasma sintering (SPS) and conventional hot pressing (HP).
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Effect of SiC content, additives and process parameters on densification and structure–property relations of pressureless sintered ZrB2–SiC composites
TL;DR: In this article, the effect of SiC content, additives, and process parameters on densification and structure-property relations of pressureless sintered ZrB2-(10−40 vol%) SiC particulate composites have been studied.
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Solution-Based Synthesis of Submicrometer ZrB2 and ZrB2–TaB2
TL;DR: In this paper, a solution-based synthesis of zirconium diboride and a tantalum dibboride mixture was proposed, and spherical particles of 200-600 nm for pure zrB 2 and ZrB2 -TaB 2 mixtures were formed.
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Significance of hot pressing parameters and reinforcement size on densification behavior of ZrB2–25 vol% SiC UHTCs
TL;DR: In this paper, an experimental design technique (Taguchi method) was used to specify the significance of four factors and to obtain the optimal conditions for hot pressing ZrB 2 -SiC composites, and a relative density of ~100% was obtained at the optimal processing conditions: temperature of 1850°C, holding time of 90min, pressure of 16MPa and SiC particle size of 200mm.