Journal ArticleDOI
Metal‐polycrystalline silicon barriers
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This article is published in Physica Status Solidi (a).The article was published on 1973-02-16. It has received 8 citations till now. The article focuses on the topics: Nanocrystalline silicon & Polycrystalline silicon.read more
Citations
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Chemically Vapor Deposited Polycrystalline-Silicon Films
TL;DR: In this article, the formation and properties of polycrystalline silicon films for different applications are reviewed, and the use of the films in semiconductor devices is discussed, where the deposition temperature, gases, and impurities are found to have the major influence on the properties of the polysilicon films.
Journal ArticleDOI
Electronic properties of undoped polycrystalline silicon
TL;DR: In this paper, the ability of polycrystalline silicon to form Schottky barriers and p−i−n junctions has been evaluated experimentally and the results show Si grain boundaries behaving as p-type layers separating high resistivity grains.
Journal ArticleDOI
EPR of the TiO4/Li center in crystalline quartz
J Isoya,W.C Tennant,John A. Weil +2 more
TL;DR: In this paper, the hyperfine and nuclear quadrupole parameter matrices of the low-abundance isotopes 47,49 Ti for the S = caset1 2 center [TiO 4 /Li] A o in crystalline quartz have been obtained from the single-crystal anisotropy of the electron paramagnetic resonance spectra taken at about 35 K.
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P-I-N junctions in polycrystalline-silicon
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Electrical characteristics of metal/Si-Ge contacts
G. E. Pike,J. N. Sweet +1 more
TL;DR: In this paper, the electrical properties of metal contacts to a polycrystalline Si-Ge alloy (80 at.% Si) for a wide variety of conditions have been made.
References
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Journal ArticleDOI
Nonohmic Properties of Zinc Oxide Ceramics
TL;DR: In this paper, the non-ohmic properties of ZnO ceramics with five additives of Bi2O3, CoO, MnO, Cr2O 3, and Sb 2O3 are studied in relation to sintering temperature, additive content, and temperature dependence.
Journal ArticleDOI
Hall Mobility in Chemically Deposited Polycrystalline Silicon
TL;DR: In this article, the authors performed Hall mobility measurements on polycrystalline silicon films with and without doping impurities added during deposition or by diffusion from a doped vapordeposited oxide.
Journal ArticleDOI
Effects of deep impurities on n + p junction reverse-biased small-signal capacitance
E. Schibli,A.G. Milnes +1 more
TL;DR: In this article, the authors analyzed the small signal capacitance of a reverse-biased n+p junction containing deep impurities and derived the break point on a log C vs. log frequency plot.
Book
Effect of arsenic pressure on heat treatment of liquid epitaxial GaAs
E. Mũnoz,W. L. Snyder,J. L. Moll +2 more
TL;DR: In this article, short-time heat treatments in a H2 flow, and under an As vapor, have been performed on n-type and p-type GaAs crystals, and the changes in carrier concentration as function of As vapor pressure showed the acceptors to be associated with As vacancies.
Journal ArticleDOI
Pn junctions in polycristalline-silicon films
J. Manoliu,Theodore I. Kamins +1 more
TL;DR: In this paper, the capacitance-voltage relation has been found to be frequency dependent, consistent with the inability of trapped carriers to respond to high-frequency excitation in high frequency excitation.