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Patent

Method of Fabricating High Aspect Ratio Transducer Using Metal Compression Bonding

Woo-Tae Park, +2 more
TLDR
In this paper, a method and apparatus for fabricating a high aspect ratio MEMS device by using metal thermocompression bonding to assemble a reference wafer, a bulk MEMS active wafer and a cap wafer was described.
Abstract: 
A method and apparatus are described for fabricating a high aspect ratio MEMS device by using metal thermocompression bonding to assemble a reference wafer (100), a bulk MEMS active wafer (200), and a cap wafer (300) to provide a proof mass (200 d) formed from the active wafer with bottom and top capacitive sensing electrodes (115, 315) which are hermetically sealed from the ambient environment by sealing ring structures (112/202/200 a/ 212/312 and 116/206/200 e/ 216/316).

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Patent

System comprising a semiconductor device and structure

Zvi Or-Bach, +5 more
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Patent

Semiconductor device and structure

Zvi Or-Bach, +1 more
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
Patent

Method for fabrication of a semiconductor device and structure

Zvi Or-Bach, +4 more
TL;DR: In this article, a method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a metal layer overlaying the first layer and providing at least one connection to the first Transistors, and finally processing a second layer of second transistors overlaying a first metal layer, wherein the second metal layer is connected to provide power to at least 1 of the second Transistors.
Patent

3D semiconductor device and structure

Zvi Or-Bach, +2 more
TL;DR: In this article, an Integrated Circuit device including a first layer including first single crystal transistors; a second layer overlaying the first layer, the second layer including second single-crystal transistors, where the second-layer thickness is less than one micron, where a plurality of the first transistors is circumscribed by a first dice lane of at least 10 microns width, and there are no first conductive connections to the plurality of transistors that cross the first-dice lane.
Patent

3D integrated circuit with logic

Zvi Or-Bach, +1 more
TL;DR: In this paper, an integrated circuit including a first layer of logic circuits, and a second layer with logic circuits overlaying the first layer, where each flip-flop has at least one connection to the second layer, is described.
References
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Patent

Method of making an x-y axis dual-mass tuning fork gyroscope with vertically integrated electronics and wafer-scale hermetic packaging

Steven S. Nasiri, +1 more
TL;DR: In this paper, a dual-axis sensor for measuring X and Y components of angular velocity in an X-Y sensor plane is provided, which consists of a first subsensor for measuring the X component and a second subsensor to measure the Y component.
Patent

Vertical integration of a MEMS structure with electronics in a hermetically sealed cavity

Steven S. Nasiri, +1 more
TL;DR: In this article, a wafer-scale fabrication method for providing MEMS assemblies having a MEMS subassembly sandwiched between and bonded to a cap and a base is provided.
Patent

Automatic control system

Shigekazu Nagai, +1 more
TL;DR: In this paper, an automatic control system comprising a server offered by a service provider that stores control applets to control a particular control object device, a control device including a control object devices and a computer device, and a network to connect the server with the control device is described.
Patent

Multiple axis accelerometer

Steven S. Nasiri, +1 more
TL;DR: In this article, a sensor for measuring acceleration in three mutually orthogonal axes, X, Y and Z, is described, and the sensor includes a sensor subassembly comprising a base which is substantially parallel to the X-Y sensing plane; a proof mass disposed in the X -Y and Z sensing plane and constrained to move substantially in X, y and z, about by at least one linkage.
Patent

Integrated microelectromechanical systems (mems) vibrating mass z-axis rate sensor

Steven S. Nasiri, +2 more
TL;DR: In this paper, the authors propose a sensor that measures angular velocity about an axis that is normal to a sensing plane of the sensor, which comprises a sensing subassembly that includes a planar frame parallel to the sensing plane, a first proof mass disposed in the sensing planes, a second proof mass disposing in the plane laterally, and a linkage within the frame.