Patent
Method for fabrication of a semiconductor device and structure
TLDR
In this article, a method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a metal layer overlaying the first layer and providing at least one connection to the first Transistors, and finally processing a second layer of second transistors overlaying a first metal layer, wherein the second metal layer is connected to provide power to at least 1 of the second Transistors.Abstract:
A method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a first metal layer overlaying the first transistors and providing at least one connection to the first transistors, then processing a second metal layer overlaying the first metal layer, then processing a second layer of second transistors overlaying the second metal layer, wherein the second metal layer is connected to provide power to at least one of the second transistors.read more
Citations
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Patent
Semiconductor device, and manufacturing method thereof
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Patent
System comprising a semiconductor device and structure
Zvi Or-Bach,Brian Cronquist,Israel Beinglass,Jan Lodewijk de Jong,Deepak C. Sekar,Zeev Wurman +5 more
TL;DR: In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Patent
Semiconductor device and structure
Zvi Or-Bach,Brian Cronquist +1 more
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
Patent
System, method, and computer program product for improving memory systems
TL;DR: In this paper, a system, method, and computer program product for a memory system is described, which includes a first semiconductor platform including at least one first circuit, and at least two additional semiconductor platforms stacked with the first and additional circuits.
Patent
Nonvolatile memory device and method for fabricating the same
Soo-doo Chae,Myoung-Bum Lee,Hui-chang Moon,Han-soo Kim,Jin-Gyun Kim,Ki-Hyun Kim,Si-Young Choi,Hoosung Cho +7 more
TL;DR: In this article, a three-dimensional nonvolatile memory device and a method for fabricating the same include a semiconductor substrate, a plurality of active pillars and gate electrodes.
References
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Book
Digital Systems Testing and Testable Design
TL;DR: The new edition of Breuer-Friedman's Diagnosis and Reliable Design ofDigital Systems offers comprehensive and state-ofthe-art treatment of both testing and testable design.
Journal ArticleDOI
Nanowire transistors without junctions
Jean-Pierre Colinge,Chi-Woo Lee,Aryan Afzalian,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Pedram Razavi,B. O'Neill,Alan Blake,Mary White,Anne-Marie Kelleher,Brendan McCarthy,Richard Murphy +13 more
TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Journal ArticleDOI
Designing reliable systems from unreliable components: the challenges of transistor variability and degradation
TL;DR: This article discusses effects of variability in transistor performance and proposes microarchitecture, circuit, and testing research that focuses on designing with many unreliable components (transistors) to yield reliable system designs.
Patent
Three dimensional structure memory
TL;DR: The 3Dimensional Structure (3DS) Memory (100) as mentioned in this paper is a three-dimensional structure (3D) memory that allows physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized.
Patent
Methods of making displays
Steven D. Thelss,Paul F. Baude,Michael A. Haase,Eric W. Hemmesch,Yaoqi J. Liu,Sergey S. Lamansky +5 more
TL;DR: In this article, the authors describe a display with zinc oxide row and column drivers integrated onto the same display substrate as zinc oxide pixel transistors and organic light emitting diodes.