Patent
Method of forming insulating film
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TLDR
In this article, a film forming method of forming a silicon containing insulating film by plasma CVD is proposed. But the method is not suitable for the fabrication of thin films.Abstract:
The present invention relates to a film forming method of forming a silicon containing insulating film by plasma CVD. Objects of the present invention are to form, using a highly safe reaction gas, an insulating film which is dense, has excellent step coverage and is low in moisture and in organic residues such as carbon. The insulating film has good affinity for the silicon oxide film formed by the thermal CVD method. The invention also enables control of the refractive index and stress etc. of the insulating film formed. The mixed gas, including the organic compound having Si-H bonds and the oxidizing gas, is converted to a plasma and the silicon containing insulating film is formed on a deposition substrate from the plasma.read more
Citations
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Plasma processes for depositing low dielectric constant films
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References
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Methods and apparatus for depositing barrier coatings
TL;DR: In this article, a barrier coating is formed on a polymeric article (B, C) such as on the interior of a thermoplastic container, and an electric field is also applied to the container, so that the reaction products are deposited under the influence of the electric field to form the barrier coating.
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Process for forming highly conformal dielectric coatings in the manufacture of integrated circuits and product produced thereby
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