Patent
Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
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TLDR
In this paper, a method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon oxide and an aluminum oxide, which is exposed to an etching solution comprising HF and an organic HF solvent.Abstract:
A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and an organic HF solvent under conditions effective to etch the silicon nitride substantially selectively relative to the oxide. Other aspects and implementations are contemplated.read more
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References
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Journal ArticleDOI
Etching mechanism of silicon nitride in HF-based solutions
TL;DR: In this paper, a reaction mechanism for the etching of silicon nitride layers in aqueous hydrofluoric acid solutions is proposed, where the surface of consists of groups that are etched from the solid matrix via three possible routes.
Patent
Novel composition for selective etching of oxides over metals
Kenji Honda,Michelle Elderkin +1 more
TL;DR: In this paper, a composition for selective etching of oxides over a metal was proposed, which contains water, hydroxylammonium salt, carboxylic acid, a fluorine containing compound, and optionally a base.
Patent
Silicon nitride and silicon oxide etchant
TL;DR: An etching solution for composite structures of silicon nitride on silicon oxide on silicon substrates was proposed in this paper, which can etch composite structures at a rate equal to or faster than the silicon oxide which comprises concentrated aqueous hydrogen fluoride in a high boiling organic solvent.
Journal ArticleDOI
The Role of Chemical Species in the Passivation of 〈100〉 Silicon Surfaces by HF in Water‐Ethanol Solutions
TL;DR: The role played by the chemical species present in HF/water-ethanol solutions as last cleaning steps of the silicon surface has been analyzed in this article, where the concentrations of these species as a function of the ethanol content have been calculated from measured equilibrium constants for the dissociation and homoconjugation reactions of HF in water-ETHanol solutions.