Journal ArticleDOI
Modulation Characteristics Enhancement of Monolithically Integrated Laser Diodes Under Mutual Injection Locking
Changzheng Sun,Dong Liu,Bing Xiong,Yi Luo,Jian Wang,Zhibiao Hao,Yanjun Han,Lai Wang,Hongtao Li +8 more
TLDR
In this paper, mutual injection locking of monolithically integrated distributed feedback (DFB) lasers is used to enhance the modulation characteristics of monolithic DFB lasers. And the authors show that the mutually injection-locked DFB laser exhibits reduced harmonics and third-order intermodulation distortion, and suppressed relative intensity noise near the relaxation oscillation frequency.Abstract:
Modulation characteristics enhancement by mutual injection locking of monolithically integrated distributed feedback (DFB) lasers is studied. Locking bistability in mutually coupled integrated lasers is observed. Resonance frequency as high as 34.3 GHz is recorded, corresponding to more than fivefold enhancement over the relaxation oscillation frequency at free running state. The mutually injection-locked lasers exhibit reduced harmonics and third-order intermodulation distortion, as well as suppressed relative intensity noise near the relaxation oscillation frequency. The spurious-free dynamic range is improved from 75 to 80 dB·Hz2/3. Furthermore, alleviation of chirp-induced power fading in analog optical links has been demonstrated. To our knowledge, this is the first time that suppressed nonlinear distortion and noise as well as chirp reduction are simultaneously demonstrated for monolithic mutually injection-locked DFB lasers.read more
Citations
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Journal ArticleDOI
Optical Injection Locking: From Principle to Applications
Zhixin Liu,Radan Slavik +1 more
TL;DR: This paper reviews optical injection locking of semiconductor lasers and its application in optical communications and signal processing with a focus on new developments in the past decade, under the categories of ‘High Speed Directly Modulated Lasers’ and ‘Optical Carrier Recovery’.
Journal ArticleDOI
Direct and Electroabsorption Modulation of a III–V-on-Silicon DFB Laser at 56 Gb/s
Amin Abbasi,Bart Moeneclaey,Jochem Verbist,Xin Yin,Johan Bauwelinck,Guang-Hua Duan,Gunther Roelkens,Geert Morthier +7 more
TL;DR: In this paper, the authors demonstrate 56 Gb/s nonreturn to zero on-off keying (NRZ-OOK) direct modulation based on a high bandwidth heterogeneously integrated III-V-on-silicon distributed feedback laser, as well as transmission over 2 km single mode fiber.
Journal ArticleDOI
Dynamics and Stability of Mutually Coupled Nano-Lasers
Hong Han,K. Alan Shore +1 more
TL;DR: In this article, the dynamics of mutually coupled nano-laser has been explored theoretically using rate equations which include the Purcell cavity-enhanced spontaneous emission factor F and the spontaneous emission coupling factor β.
Proceedings ArticleDOI
Monolithically integrated multi-section semiconductor lasers: towards the future of integrated microwave photonics
TL;DR: In this paper, the photonic microwave techniques based on the nonlinear dynamics of MI-MSSLs, consisting of electro-optic conversion characteristics enhancement, photonic microwaving generation, microwave photonic filter, as well as multiwavelength laser array for wavelength division multiplexing radio-over-fiber (WDM-RoF) networks, are discussed.
Journal ArticleDOI
Modulation properties of solitary and optically injected phased-array semiconductor lasers
TL;DR: In this paper, the modulation properties of two-element phased-array semiconductor lasers that can be described by coupled mode theory were investigated. And the authors found that out-of-phase modulation allows for bandwidth enhancement if the waveguide structure is properly chosen; for example, for a combination of index antiguiding and gain-guiding, the achievable modulation bandwidth in the case of outofphase modulation could be much higher than the one when they are modulated in phase.
References
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Journal ArticleDOI
Locking conditions and stability properties for a semiconductor laser with external light injection
TL;DR: In this paper, a theoretical and experimental investigation of injection locking of semiconductor lasers is presented, taking into account the dependence of refractive index on the carrier density expressed by the linewidth enhancement factor α.
Journal ArticleDOI
Comparison of optical millimetre-wave system concepts with regard to chromatic dispersion
TL;DR: In this paper, the impact of chromatic dispersion in optical millimetre-wave systems operating in the 1.55 µm wavelength window was investigated. But the effect of dispersion on the performance of optical modulators was not considered.
Journal ArticleDOI
Nonlinear dynamics induced by external optical injection in semiconductor lasers
TL;DR: In this article, the authors describe a mapping of the typical dynamics induced in a nearly single-mode semiconductor laser biased well above the threshold for laser oscillation as the amplitude and frequency offset of the master laser are changed.
Journal ArticleDOI
Cavity resonance shift and bandwidth enhancement in semiconductor lasers with strong light injection
TL;DR: In this paper, the authors theoretically investigated the physical mechanism of significant bandwidth enhancement in injection-locked semiconductor lasers with strong light injection, and they found that strong injection can increase the semiconductor laser bandwidth to several times the free-running relaxation oscillation bandwidth.
Journal ArticleDOI
Enhanced Modulation Characteristics of Optical Injection-Locked Lasers: A Tutorial
TL;DR: In this article, a tutorial of optical injection locking of semiconductor lasers is given, with particular emphasis on the enhancement of system parameters, and physical intuition of each parameter enhancement is explained and practical design rules and trends are also shown.